Identification of interconnect failure mechanisms using RF impedance analysis

2009 ◽  
Author(s):  
Daeil Kwon ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Failure Mechanisms ◽  
Impedance Analysis

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Real-time cryo-deformation of polypropylene and impact-modified polypropylene in the transmission electron microscope

1993 ◽  
Vol 51 ◽  
pp. 892-893
Author(s):  
Robert C. Cieslinski ◽  
H. Craig Silvis ◽  
Daniel J. Murray
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Failure Mechanisms ◽  
Brittle Transition ◽  
Molded Part ◽  
Transmission Electron ◽  
Solvent Cast ◽  
The Impact ◽  
Annealed Copper ◽  
Dynamic Plane

An understanding of the mechanical behavior polymers in the ductile-brittle transition region will result in materials with improved properties. A technique has been developed that allows the realtime observation of dynamic plane stress failure mechanisms in the transmission electron microscope. With the addition of a cryo-tensile stage, this technique has been extented to -173°C, allowing the observation of deformation during the ductile-brittle transition.The technique makes use of an annealed copper cartridge in which a thin section of bulk polymer specimen is bonded and plastically deformed in tension in the TEM using a screw-driven tensile stage. In contrast to previous deformation studies on solvent-cast films, this technique can examine the frozen-in morphology of a molded part.The deformation behavior of polypropylene and polypropylene impact modified with EPDM (ethylene-propylene diene modified) and PE (polyethylene) rubbers were investigated as function of temperature and the molecular weight of the impact modifier.

Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

2020 ◽  
Vol 38 (4A) ◽  
pp. 491-500
Author(s):  
Abeer F. Al-Attar ◽  
Saad B. H. Farid ◽  
Fadhil A. Hashim
Keyword(s):  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Structural Information ◽  
Impedance Analysis ◽  
High Energy ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Powder Morphology ◽  
X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

2008 ◽  
Author(s):  
Suk Min Kim ◽  
Jung Ho Lee ◽  
Jong Hak Lee ◽  
Hyung Ki Kim ◽  
Myung Sick Chang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Electrical Characteristics ◽  
The Future ◽  
Electrical Analysis

Abstract We report an analysis of a single shared column fail on DRAM technology using a nano-probing technique in this work. The electrical characteristics of the failed transistors show that the column fails were caused by two different failure mechanisms: abnormal contact and implant profiles. We believe that electrical analysis using nano-probing will be a powerful tool for non-visible failure analysis in the future because it is impossible to clearly reveal these two different failure mechanisms solely using physical failure methods.

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