Determination of channel temperature of AlGaN/GaN HEMT by electrical method

2010 ◽  
Author(s):  
Shiwei Feng ◽  
Peifeng Hu ◽  
Guangchen Zhang ◽  
Chunsheng Guo ◽  
Xuesong Xie ◽  
...  
Keyword(s):  
Electrical Method ◽  
Gan Hemt ◽  
Channel Temperature

Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

2021 ◽  
pp. 111595
Author(s):  
Abu Zahed Chowdhury ◽  
Mohammad Abdul Alim ◽  
Shariful Islam ◽  
Christophe Gaquiere
Keyword(s):  
Thermal Sensitivity ◽  
Gan Hemt ◽  
Channel Temperature

D-C Network-Analyzer Determination of Fluid-Flow Pattern in a Centrifugal Impeller

1947 ◽  
Vol 14 (2) ◽  
pp. A113-A118
Author(s):  
C. Concordia ◽  
G. K. Carter
Keyword(s):  
Fluid Flow ◽  
Flow Pattern ◽  
Arbitrary Shape ◽  
Centrifugal Impeller ◽  
Network Analyzer ◽  
Two Dimensional ◽  
Special Shape ◽  
Electrical Method ◽  
Incompressible Ideal Fluid

Abstract The objects of this paper are, first, to describe an electrical method of determining the flow pattern for the flow of an incompressible ideal fluid through a two-dimensional centrifugal impeller, and second, to present the results obtained for a particular impeller. The method can be and has been applied to impellers with blades of arbitrary shape, as distinguished from analytical methods which can be applied directly only to blades of special shape (1).

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

2017 ◽  
Vol 215 (9) ◽  
pp. 1700628
Author(s):  
Yi-Nan Zhong ◽  
Shun-Wei Tang ◽  
Yue-Ming Hsin
Keyword(s):  
Gan Hemt ◽  
Wafer Test

Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method

2012 ◽  
Vol 1432 ◽  
Author(s):  
D. Cheney ◽  
R. Deist ◽  
B. Gila ◽  
F. Ren ◽  
P. Whiting ◽  
...  
Keyword(s):  
Band Gap ◽  
Optical Pumping ◽  
Drain Current ◽  
Stress Tests ◽  
Optically Pumped ◽  
Gan Hemt ◽  
Load Line ◽  
Gan Hemts ◽  
Dc Stress

ABSTRACTBy pumping AlGaN/GaN HEMTs with below band-gap light we observe changes in drain current that correspond to the trapping and detrapping of carriers within the band-gap. These changes in drain current are indicators of trap density, since the energy from a specific wavelength of light pumps traps whose activation energies are less than or equal to that of the light source.AlGaN/GaN HEMTs on SiC with dual submicron gates with widths of 125nm, 140nm, or 170nm, are DC-stressed under three different conditions along a load line: VGS=0, VDS=5 (on-state), VGS=-2, VDS=9.2 and, VGS=-6, VDS=25 (off-state). The stress tests are interrupted at 20% degradation and the optically pumped comparisons to the baseline are measured.This paper describes the optical pumping technique and results from experiments of AlGaN/GaN HEMTs under the three DC stress biases along a load line.

scholarly journals Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

2018 ◽  
Vol 69 (5) ◽  
pp. 390-394
Author(s):  
Martin Florovič ◽  
Róbert Szobolovszký ◽  
Jaroslav Kováč ◽  
Jaroslav Kováč ◽  
Aleš Chvála ◽  
...  
Keyword(s):  
Operation Mode ◽  
Drain Current ◽  
Temperature Dependent ◽  
Saturation Velocity ◽  
Channel Temperature ◽  
Device Reliability ◽  
Source Resistance ◽  
Current Change ◽  
Voltage Saturation

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

An electrical method of measuring non-electrolyte permeability

1969 ◽  
Vol 172 (1028) ◽  
pp. 203-225 ◽  
Keyword(s):  
Gall Bladder ◽  
Streaming Potential ◽  
Concentration Gradients ◽  
Bladder Epithelium ◽  
Electrical Method ◽  
Streaming Potentials ◽  
Unstirred Layers ◽  
Large Numbers ◽  
Tracer Methods

A rapid procedure based on that of Smyth & Wright (1966) is described for obtaining a measure of the permeability of rabbit gall-bladder epithelium to non-electrolytes. The underlying principles are that concentration gradients of permeant molecules produce lower rates of osmotic flow across a membrane than does the same gradient of an impermeant molecule, and that streaming potentials in the gall-bladder are directly proportional to the flow rate. Hence reflexion coefficients (cr’s) were calculated as the ratio of the streaming potential produced by a 0* 1 m gradient of the test solute to the streaming potential produced by a 0T m gradient of an impermeant reference solute, sucrose. The method yields results in agreement with those obtained in the gall-bladder by a zero-flow procedure. In general, the patterns of permeation derived are similar to those obtained in other tissues by the same procedure, by other osmotic procedures, or by direct chemical or tracer methods. The advantages of the method are that (a) large numbers of cr’s can be determined in one experiment with an average standard deviation of ± 8 % ; and (b) the minimum elapsed time between the preparation of a solution and the determination of or is about 90 s, so that cr’s may be obtained for some non-electrolytes subject to gradual chemical transformation in aqueous solution, such as aldehydes. The principles underlying osmotic methods of measuring permeability, and the effects of unstirred layers, are discussed.

Maximum Channel Temperature Estimation for GaN HEMT transistors with n-fingers

2021 ◽  
Author(s):  
Al-Saman A. Amgad ◽  
Yi Pei ◽  
Eugeny A. Ryndin ◽  
Fujiang Lin
Keyword(s):  
Temperature Estimation ◽  
Gan Hemt ◽  
Channel Temperature
Sign in / Sign up

Export Citation Format

Share Document