A high-speed 1-kbit high electron mobility transistor static RAM

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23135 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1670-1675 ◽

Author(s):

N.H. Sheng ◽

H.T. Wang ◽

C.P. Lee ◽

G.J. Sullivan ◽

D.L. Miller

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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A high-speed 1 Kbit high electron-mobility transistor static RAM

Microelectronics Journal ◽

10.1016/s0026-2692(88)80201-5 ◽

1988 ◽

Vol 19 (1) ◽

pp. 54

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

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Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2007.381128 ◽

2007 ◽

Author(s):

Hiroshi Murata ◽

Noriyo Kobayashi ◽

Yasuyuki Okamura ◽

Toshihiko Kosugi ◽

Takatomo Enoki

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Optical Response ◽

High Electron ◽

High Electron Mobility ◽

Photo Detectors

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Electroluminescence from an InGaAs-Based High Electron Mobility Transistor Designed for High-Speed Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l906 ◽

1997 ◽

Vol 36 (Part 2, No. 7B) ◽

pp. L906-L908 ◽

Author(s):

Naoteru Shigekawa ◽

Takatomo Enoki ◽

Tomofumi Furuta

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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A metamorphic high electron-mobility transistor with reflowed submicron T-gate for high-speed optoelectronics applications

Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701) ◽

10.1109/cos.2003.1278224 ◽

2004 ◽

Author(s):

Yi-Chung Lien ◽

Edward Yi Chang ◽

Li-Xing Chu ◽

Huang-Choung Chang ◽

Cheng-Shih Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor

Advances in Intelligent Systems and Computing - Intelligent Computing, Communication and Devices ◽

10.1007/978-81-322-2012-1_57 ◽

2014 ◽

pp. 535-543

Author(s):

Meryleen Mohapatra ◽

Nutan Shukla ◽

A.K. Panda

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Ultra High Speed

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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters ◽

10.1063/1.2431567 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023509 ◽

Author(s):

Y. C. Lin ◽

H. Yamaguchi ◽

E. Y. Chang ◽

Y. C. Hsieh ◽

M. Ueki ◽

...

Keyword(s):

Electron Mobility ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

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LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2619 ◽

2019 ◽

Vol 14 (8) ◽

pp. 1133-1142 ◽

Author(s):

J. Ajayan ◽

D. Nirmal ◽

P. Mohankumar ◽

L. Arivazhagan ◽

M. Saravanan ◽

...

Keyword(s):

Electron Mobility ◽

Gaas Substrate ◽

High Performance ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

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High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2300 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2300-2305 ◽

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Kwangseok Seo

Keyword(s):

Low Power ◽

Electron Mobility ◽

Resonant Tunneling ◽

High Electron Mobility Transistor ◽

Resonant Tunneling Diode ◽

High Electron ◽

Flip Flop ◽

High Electron Mobility ◽

Tunneling Diode

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High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3384 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3384-3386 ◽

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Sangsub Song ◽

Sangho Park ◽

Kwangseok Seo

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

Digital Circuits ◽

High Electron Mobility Transistor ◽

Resonant Tunneling Diode ◽

High Electron ◽

High Electron Mobility ◽

Tunneling Diode

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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2018.2853547 ◽

2018 ◽

Vol 6 ◽

pp. 797-802 ◽

Author(s):

Jing-Neng Yao ◽

Yueh-Chin Lin ◽

Heng-Tung Hsu ◽

Kai-Chun Yang ◽

Hisang-Hua Hsu ◽

...

Keyword(s):

Low Power ◽

Electron Mobility ◽

Ohmic Contacts ◽

High Electron Mobility Transistor ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Low Power Logic

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