High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure

2006 ◽  
Vol 45 (4B) ◽  
pp. 3384-3386 ◽  
Author(s):  
Hyungtae Kim ◽  
Seongjin Yeon ◽  
Sangsub Song ◽  
Sangho Park ◽  
Kwangseok Seo
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Speed ◽  
Digital Circuits ◽  
High Electron Mobility Transistor ◽  
Resonant Tunneling Diode ◽  
High Electron ◽  
High Electron Mobility ◽  
Tunneling Diode

scholarly journals A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽  
2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
Mohammad Javad Sharifi ◽  
Davoud Bahrepour
Keyword(s):  
Electron Mobility ◽  
Resonant Tunneling ◽  
High Performance ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Xor Gate ◽  
High Electron Mobility ◽  
Existing Structures ◽  
Input And Output ◽  
Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

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