High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Hyungtae Kim; Seongjin Yeon; Kwangseok Seo

doi:10.1143/jjap.46.2300

High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2300 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2300-2305 ◽

Cited By ~ 5

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Kwangseok Seo

Keyword(s):

Low Power ◽

Electron Mobility ◽

Resonant Tunneling ◽

High Speed ◽

High Electron Mobility Transistor ◽

Resonant Tunneling Diode ◽

High Electron ◽

Flip Flop ◽

High Electron Mobility ◽

Tunneling Diode

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High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3384 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3384-3386 ◽

Cited By ~ 8

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Sangsub Song ◽

Sangho Park ◽

Kwangseok Seo

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Speed ◽

Digital Circuits ◽

High Electron Mobility Transistor ◽

Resonant Tunneling Diode ◽

High Electron ◽

High Electron Mobility ◽

Tunneling Diode

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High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2877 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2877-2879 ◽

Cited By ~ 2

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Kwangseok Seo

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

High Speed ◽

Field Effect Transistor ◽

High Electron Mobility Transistor ◽

Power Source ◽

High Electron ◽

Flip Flop ◽

Tunneling Diode ◽

Effect Transistor

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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2018.2853547 ◽

2018 ◽

Vol 6 ◽

pp. 797-802 ◽

Cited By ~ 3

Author(s):

Jing-Neng Yao ◽

Yueh-Chin Lin ◽

Heng-Tung Hsu ◽

Kai-Chun Yang ◽

Hisang-Hua Hsu ◽

...

Keyword(s):

Low Power ◽

Electron Mobility ◽

High Speed ◽

Ohmic Contacts ◽

High Electron Mobility Transistor ◽

Gate Length ◽

High Electron ◽

High Electron Mobility ◽

Low Power Logic

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Optical Response of InP-based High-Electron Mobility Transistor and its Applications to High-Speed Photo-Detectors and Signal Converters

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials ◽

10.1109/iciprm.2007.381128 ◽

2007 ◽

Cited By ~ 3

Author(s):

Hiroshi Murata ◽

Noriyo Kobayashi ◽

Yasuyuki Okamura ◽

Toshihiko Kosugi ◽

Takatomo Enoki

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Electron Mobility Transistor ◽

Optical Response ◽

High Electron ◽

High Electron Mobility ◽

Photo Detectors

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Electroluminescence from an InGaAs-Based High Electron Mobility Transistor Designed for High-Speed Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.l906 ◽

1997 ◽

Vol 36 (Part 2, No. 7B) ◽

pp. L906-L908 ◽

Cited By ~ 3

Author(s):

Naoteru Shigekawa ◽

Takatomo Enoki ◽

Tomofumi Furuta

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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A metamorphic high electron-mobility transistor with reflowed submicron T-gate for high-speed optoelectronics applications

Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701) ◽

10.1109/cos.2003.1278224 ◽

2004 ◽

Author(s):

Yi-Chung Lien ◽

Edward Yi Chang ◽

Li-Xing Chu ◽

Huang-Choung Chang ◽

Cheng-Shih Lee ◽

...

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Ultra high-Speed InAlAs/InGaAs High Electron Mobility Transistor

Advances in Intelligent Systems and Computing - Intelligent Computing, Communication and Devices ◽

10.1007/978-81-322-2012-1_57 ◽

2014 ◽

pp. 535-543

Author(s):

Meryleen Mohapatra ◽

Nutan Shukla ◽

A.K. Panda

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Ultra High Speed

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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters ◽

10.1063/1.2431567 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023509 ◽

Cited By ~ 18

Author(s):

Y. C. Lin ◽

H. Yamaguchi ◽

E. Y. Chang ◽

Y. C. Hsieh ◽

M. Ueki ◽

...

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

Very High

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LG = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2019.2619 ◽

2019 ◽

Vol 14 (8) ◽

pp. 1133-1142 ◽

Cited By ~ 2

Author(s):

J. Ajayan ◽

D. Nirmal ◽

P. Mohankumar ◽

L. Arivazhagan ◽

M. Saravanan ◽

...

Keyword(s):

Electron Mobility ◽

Gaas Substrate ◽

High Speed ◽

High Performance ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

20 Nm

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A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

VLSI Design ◽

10.1155/2009/803974 ◽

2009 ◽

Vol 2009 ◽

pp. 1-9 ◽

Cited By ~ 2

Author(s):

Mohammad Javad Sharifi ◽

Davoud Bahrepour

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Performance ◽

High Electron Mobility Transistor ◽

High Electron ◽

Xor Gate ◽

High Electron Mobility ◽

Existing Structures ◽

Input And Output ◽

Exclusive Or

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

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