Power-efficient designs are essential for micro-power sensor systems. This paper presents a power-gating
scheme for MCML (MOS Current Mode Logic) circuits with separable-sizing sleep transistors. In the proposed scheme,
two high-threshold power-gating transistors are inserted between load transistors and outputs of the MCML circuits. The
widths and lengths of sleep transistors in power-gated blocks are separately adjusted, which are independent of the bias
circuit. Basic cells and a 1-bit full adder are used to verify the correctness of the proposed scheme. The power consuming
comparisons between conventional MCML and proposed power-gating MCML circuits are carried out. The 1-bit MCML
full adder based on the proposed scheme nearly saves 36% of energy dissipations with respect to no-power-gating MCML
one, for a power-gating activity of 0.6. Moreover, the proposed power-gating MCML circuit also has a great advantage in
power dissipations in high frequency regions compared with the power-gating static CMOS ones. The power consumption
of the MCML 1-bit full adder based on the proposed scheme is 63.2%, 44.8%, and 36.97% compared with the powergating
static CMOS one when the operating frequency is 1GHz, 1.5GHz, and 2GHz, respectively.