Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors

2008 ◽  
Vol 8 (4) ◽  
pp. 635-641 ◽  
Author(s):  
Moshe Gurfinkel ◽  
Justin C. Horst ◽  
John S. Suehle ◽  
Joseph B. Bernstein ◽  
Yoram Shapira ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

2016 ◽  
Vol 858 ◽  
pp. 615-618 ◽  
Author(s):  
Zakariae Chbili ◽  
Kin P. Cheung ◽  
Jason P. Campbell ◽  
Jaafar Chbili ◽  
Mhamed Lahbabi ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Production Environment ◽  
Early Failure ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

In this paper we report TDDB results on SiO2/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies are higher than what is reported on SiO2/Si of similar oxide thickness. The great improvement in oxide reliability and the deviation from typical SiO2/SiC observations are explained by the quality of the oxide in this study.

Characterization of 0.5 µm BiCMOS Gate Oxide Using Time Dependent Dielectric Breakdown Test

2010 ◽  
Vol 97-101 ◽  
pp. 40-44
Author(s):  
Mohd Zahrin A. Wahab ◽  
Azman Jalar ◽  
Shahrum Abdullah ◽  
Hazian Mamat
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Raw Material ◽  
Time Dependent ◽  
Process Equipment ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Bicmos Technology ◽  
Set Up

This paper presents Time Dependent Dielectric Breakdown (TDDB) testing of gate oxide on 0.5µm BiCMOS Technology. The gate oxide quality for the technology has been investigated and furthermore to qualify the whole set up of the foundry from the process, equipment, cleanroom control and raw material used to produce high quality gate oxide and hence good quality of BiCMOS devices. TDDB test is the most widely used testing to check the quality of gate oxide and in this paper the TDDB test done on MOS capacitors fabricated using 0.5 µm BiCMOS Technology. Seven consecutive qualification lots have been tested and the data shown that TDDB measurement is capable to differentiate between accepted wafer and rejected wafer. The data also shown that TDDB test was capable to characterise 0.5 µm BiCMOS gate oxide with higher yield and comparable with reference lot from other foundry fab.

Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs

2008 ◽  
Vol 55 (8) ◽  
pp. 1830-1834 ◽  
Author(s):  
Kevin Matocha ◽  
Greg Dunne ◽  
Stanislav Soloviev ◽  
Richard Beaupre
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown
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