Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

2016 ◽  
Vol 858 ◽  
pp. 615-618 ◽  
Author(s):  
Zakariae Chbili ◽  
Kin P. Cheung ◽  
Jason P. Campbell ◽  
Jaafar Chbili ◽  
Mhamed Lahbabi ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Production Environment ◽  
Early Failure ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

In this paper we report TDDB results on SiO2/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies are higher than what is reported on SiO2/Si of similar oxide thickness. The great improvement in oxide reliability and the deviation from typical SiO2/SiC observations are explained by the quality of the oxide in this study.

High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

1993 ◽  
Vol 303 ◽  
Author(s):  
G. W. Yoon ◽  
A. B. Joshi ◽  
J. Kim ◽  
D. L. Kwong
Keyword(s):  
Thermal Processing ◽  
Dielectric Breakdown ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Time Dependent ◽  
High Quality ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Stress Induced Leakage Current ◽  
As Stress

ABSTRACTIn this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

2013 ◽  
Vol 740-742 ◽  
pp. 745-748 ◽  
Author(s):  
J. Sameshima ◽  
Osamu Ishiyama ◽  
Atsushi Shimozato ◽  
K. Tamura ◽  
H. Oshima ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Wafer Surface ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Breakdown Region

Time-dependent dielectric breakdown (TDDB) measurement of MOS capacitors on an n-type 4 ° off-axis 4H-SiC(0001) wafer free from step-bunching showed specific breakdown in the Weibull distribution plots. By observing the as-grown SiC-epi wafer surface, two kinds of epitaxial surface defect, Trapezoid-shape and Bar-shape defects, were confirmed with confocal microscope. Charge to breakdown (Qbd) of MOS capacitors including an upstream line of these defects is almost the same value as that of a Wear-out breakdown region. On the other hand, the gate oxide breakdown of MOS capacitors occurred at a downstream line. It has revealed that specific part of these defects causes degradation of oxide reliability. Cross-sectional TEM images of MOS structure show that gate oxide thickness of MOS capacitor is non-uniform on the downstream line. Moreover, AFM observation of as-grown and oxidized SiC-epitaxial surfaces indicated that surface roughness of downstream line becomes 3-4 times larger than the as-grown one by oxidation process.

Characterization of 0.5 µm BiCMOS Gate Oxide Using Time Dependent Dielectric Breakdown Test

2010 ◽  
Vol 97-101 ◽  
pp. 40-44
Author(s):  
Mohd Zahrin A. Wahab ◽  
Azman Jalar ◽  
Shahrum Abdullah ◽  
Hazian Mamat
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Raw Material ◽  
Time Dependent ◽  
Process Equipment ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown ◽  
Bicmos Technology ◽  
Set Up

This paper presents Time Dependent Dielectric Breakdown (TDDB) testing of gate oxide on 0.5µm BiCMOS Technology. The gate oxide quality for the technology has been investigated and furthermore to qualify the whole set up of the foundry from the process, equipment, cleanroom control and raw material used to produce high quality gate oxide and hence good quality of BiCMOS devices. TDDB test is the most widely used testing to check the quality of gate oxide and in this paper the TDDB test done on MOS capacitors fabricated using 0.5 µm BiCMOS Technology. Seven consecutive qualification lots have been tested and the data shown that TDDB measurement is capable to differentiate between accepted wafer and rejected wafer. The data also shown that TDDB test was capable to characterise 0.5 µm BiCMOS gate oxide with higher yield and comparable with reference lot from other foundry fab.

Reliability of 4H-SiC(000-1) MOS Gate Oxide Using N2O Nitridation

2009 ◽  
Vol 615-617 ◽  
pp. 557-560 ◽  
Author(s):  
Takuma Suzuki ◽  
Junji Senzaki ◽  
Tetsuo Hatakeyama ◽  
Kenji Fukuda ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offset ◽  
Mos Capacitors ◽  
Conduction Band Offset ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Mos Gate

The oxide reliability of metal-oxide-semiconductor (MOS) capacitors on 4H-SiC(000-1) carbon face was investigated. The gate oxide was fabricated by using N2O nitridation. The effective conduction band offset (Ec) of MOS structure fabricated by N2O nitridation was increased to 2.2 eV compared with Ec = 1.7 eV for pyrogenic oxidation sample of. Furthermore, significant improvements in the oxide reliability were observed by time-dependent dielectric breakdown (TDDB) measurement. It is suggested that the N2O nitridation as a method of gate oxide fabrication satisfies oxide reliability on 4H-SiC(000-1) carbon face MOSFETs.

PHYSICS AND CHEMISTRY OF INTRINSIC TIME-DEPENDENT DIELECTRIC BREAKDOWN IN SiO2 DIELECTRICS

2001 ◽  
Vol 11 (03) ◽  
pp. 751-787 ◽  
Author(s):  
J. W. McPHERSON
Keyword(s):  
Elevated Temperatures ◽  
Dielectric Breakdown ◽  
Oxide Thickness ◽  
Time Dependent ◽  
Hole Injection ◽  
Time Dependent Dielectric Breakdown ◽  
Bond Breakage ◽  
Bond Strengths ◽  
Breakage Mechanism ◽  
Molecular Bonding

A molecular physics-based complementary model, which includes both field-induced and current-induced degradation mechanisms, is used to help resolve the E versus 1/E time-dependent dielectric breakdown (TDDB) model controversy that has existed for many years. The Complementary Model indicates either the E or 1/E–TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes at lower fields and elevated temperatures where the E-model is valid. At higher fields, lower temperatures and higher bond strengths the bond breakage mechanism must be hole-catalyzed and the TDDB physics is described well by the 1/E-model. Neither the E-model nor 1/E-model works well for oxide thickness below tox < 4 nm where direct tunneling effects dominate in these hyper-thin films. The increase in DT leakage leads to more hole injection and trapping in the SiO 2. This enhanced dielectric degradation rate with tox reduction can be easily incorporated into the Complementary Model where hole capture serves to catalyze Si–O bond breakage.

Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors

2008 ◽  
Vol 8 (4) ◽  
pp. 635-641 ◽  
Author(s):  
Moshe Gurfinkel ◽  
Justin C. Horst ◽  
John S. Suehle ◽  
Joseph B. Bernstein ◽  
Yoram Shapira ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Mos Capacitors ◽  
Time Dependent Dielectric Breakdown

950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

2008 ◽  
Vol 600-603 ◽  
pp. 1131-1134 ◽  
Author(s):  
Kevin Matocha ◽  
Zachary Stum ◽  
Steve Arthur ◽  
Greg Dunne ◽  
Ljubisa Stevanovic
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time To Failure ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Mean Time

SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 mW-cm2. Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 105 hours at 250°C.

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability

2011 ◽  
Vol 679-680 ◽  
pp. 354-357
Author(s):  
Jody Fronheiser ◽  
Aveek Chatterjee ◽  
Ulrike Grossner ◽  
Kevin Matocha ◽  
Vinayak Tilak ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Inversion Layer ◽  
Gate Oxide ◽  
Dielectric Strength ◽  
Time To Failure ◽  
Research Groups ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Time Dependent Dielectric Breakdown ◽  
Oxide Reliability

The gate oxide reliability and channel mobility of carbon face (000-1) 4H Silicon Carbide (SiC) MOSFETs are investigated. Several gate oxidation processes including dry oxygen, pyrogenic steam, and nitrided oxides were investigated utilizing MOS capacitors for time dependent dielectric breakdown (TDDB), dielectric field strength, and MOSFETs for inversion layer mobility measurements. The results show the C-face can achieve reliability similar to the Si-face, however this is highly dependent on the gate oxide process. The reliability is inversely related to the field effect mobility where other research groups report that pyrogenic steam yields the highest electron mobility while this work shows it has weakest oxide in terms of dielectric strength and shortest time to failure.

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