A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

2005 ◽  
Vol 52 (10) ◽  
pp. 2250-2257 ◽  
Author(s):  
L. Breuil ◽  
L. Haspeslagh ◽  
P. Blomme ◽  
D. Wellekens ◽  
J. DeVos ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Charge Trapping Memory ◽  
Gate Charge

Improving Zr0.5Hf0.5O2-based charge-trapped performance by graphene oxide quantum dots

2019 ◽  
Vol 12 (01) ◽  
pp. 1850093 ◽  
Author(s):  
Hong Wang ◽  
Bangfu Ding ◽  
Xiaoyan Tian ◽  
Rui Zhao ◽  
Yuanyuan Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Charge Trapping ◽  
Memory Device ◽  
Wide Bandgap ◽  
Photoelectron Spectra ◽  
Promising Candidate ◽  
New Type ◽  
Charge Trapping Memory ◽  
Graphene Oxide Quantum Dots

In this work, graphene oxide quantum dots (GOQDs) are introduced as an electron-trapped layer in Pd/Zr[Formula: see text]Hf[Formula: see text]O2 (ZHO)/SiO2/Si memory device. This structure possessed longer than 104 s retention capability, a low operation voltage around [Formula: see text][Formula: see text]V and 2.61[Formula: see text]V storage windows. GOQDs contained carbon–carbon and carbon–oxygen single/double bonds based on the analysis of C-1[Formula: see text] and O-1[Formula: see text] X-ray photoelectron spectra. It is proposed that the GOQDs’ wide bandgap with many oxygen-containing functional groups favors charge capture to a greater extent. This new type of charge-trapping memory can be a promising candidate for wide application to storing information with non-volatility in the big data era.

Novel multi-bit non-uniform channel charge trapping memory device with virtual-source NAND flash array

2010 ◽  
Vol 31 (10) ◽  
pp. 104009
Author(s):  
Gu Haiming ◽  
Pan Liyang ◽  
Zhu Peng ◽  
Wu Dong ◽  
Zhang Zhigang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Nand Flash ◽  
Virtual Source ◽  
Uniform Channel ◽  
Charge Trapping Memory

Novel Dual Bit Tri-Gate Charge Trapping Memory Devices

2004 ◽  
Vol 25 (12) ◽  
pp. 810-812 ◽  
Author(s):  
M. Specht ◽  
R. Kommling ◽  
F. Hofmann ◽  
V. Klandzievski ◽  
L. Dreeskornfeld ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Devices ◽  
Charge Trapping Memory ◽  
Gate Charge

Charge trapping memory device based on the Ga 2 O 3 films as trapping and blocking layer

2019 ◽  
Vol 28 (10) ◽  
pp. 106802
Author(s):  
Bing Bai ◽  
Hong Wang ◽  
Yan Li ◽  
Yunxia Hao ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Blocking Layer ◽  
Charge Trapping Memory

Charge-trapping memory device based on a heterostructure of MoS2 and CrPS4

2021 ◽  
Vol 78 (9) ◽  
pp. 816-821
Author(s):  
Minjeong Shin ◽  
Mi Jung Lee ◽  
Chansoo Yoon ◽  
Sohwi Kim ◽  
Bae Ho Park ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Charge Trapping Memory
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