A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

2010 ◽  
Vol 57 (9) ◽  
pp. 2057-2066 ◽  
Author(s):  
Yi Zhao ◽  
Hirosaki Matsumoto ◽  
Takeshi Sato ◽  
Susumu Koyama ◽  
Mitsuru Takenaka ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Interface Roughness ◽  
Strained Si ◽  
Surface Roughness Scattering

Experimental investigation and modelling of light scattering in a-Si:H solar cells deposited on glass/ZnO:Al substrates

2002 ◽  
Vol 715 ◽  
Author(s):  
J. Krc ◽  
M. Zeman ◽  
O. Kluth ◽  
F. Smole ◽  
M. Topic
Keyword(s):  
Surface Roughness ◽  
Experimental Investigation ◽  
Solar Cells ◽  
Angular Distribution ◽  
Light Scattering ◽  
Optical Model ◽  
Distribution Functions ◽  
Interface Roughness ◽  
Scattering Parameters ◽  
Good Agreement

AbstractThe descriptive scattering parameters, haze and angular distribution functions of textured ZnO:Al transparent conductive oxides with different surface roughness are measured. An approach to determine the scattering parameters of all internal interfaces in p-i-n a-Si:H solar cells deposited on the glass/ZnO:Al substrates is presented. Using the determined scattering parameters as the input parameters of the optical model, a good agreement between the measured and simulated quantum efficiencies of the p-i-n a-Si:H solar cells with different interface roughness is achieved.

Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 1101-1104 ◽  
Author(s):  
M.G. Jaikumar ◽  
Shreepad Karmalkar
Keyword(s):  
Surface Roughness ◽  
Measured Data ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Material Parameters ◽  
Velocity Saturation ◽  
Physical Mechanisms ◽  
Surface Roughness Scattering ◽  
Wide Range ◽  
Tcad Simulation

4H-Silicon Carbide VDMOSFET is simulated using the Sentaurus TCAD package of Synopsys. The simulator is calibrated against measured data for a wide range of bias conditions and temperature. Material parameters of 4H-SiC are taken from literature and used in the available silicon models of the simulator. The empirical parameters are adjusted to get a good fit between the simulated curves and measured data. The simulation incorporates the bias and temperature dependence of important physical mechanisms like interface trap density, coulombic interface trap scattering, surface roughness scattering and velocity saturation.

Interfacial Versus Cohesive Failure on Polymer-Metal Interfaces in Electronic Packaging—Effects of Interface Roughness

2002 ◽  
Vol 124 (2) ◽  
pp. 127-134 ◽  
Author(s):  
Qizhou Yao ◽  
Jianmin Qu
Keyword(s):  
Surface Roughness ◽  
Fracture Mechanics ◽  
Electronic Packaging ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Interface Roughness ◽  
Cohesive Failure ◽  
Mechanics Model ◽  
Polymer Metal ◽  
Metal Interfaces

Debonding of polymer-metal interfaces often involves both interfacial and cohesive failure. Since the cohesive strength of polymers is usually much greater than the polymer-metal interfacial strength, cohesive failure near the interface is usually desired for enhancing the interfacial adhesion. Roughened surfaces generally produce more cohesive failure; therefore, they are used commonly in practice to obtain better adhesion. This paper develops a fracture mechanics model that can be used to quantitatively predict the amount of cohesive failure once the surface roughness data are given. An epoxy/Al interface was investigated using this fracture mechanics model. The predicted amount of cohesive failure as a function of surface roughness compares very well with the experimentally measured values. It is believed that this model can be extended to other polymer–metal interfaces. Contributed by the Electronic and Photonic Packaging Division for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received by the EPPD.

scholarly journals Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Qun Li ◽  
Jingwen Zhang ◽  
Li Meng ◽  
Jing Chong ◽  
Xun Hou
Keyword(s):  
Surface Roughness ◽  
Theoretical Model ◽  
Interface Roughness ◽  
Mobility Limitations ◽  
Gaussian Form ◽  
Quantitative Measurements ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
Exponential Correlation Function ◽  
Gan Heterostructure

The dislocations and surface roughness in an AlGaN/AlN/GaN heterostructure were analyzed by transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively, and the mobility limitation mechanisms in the two-dimensional electron gas (2DEG) were studied using a theoretical model that took into account the most important scattering mechanisms. An exponential correlation function provides a better description of the statistical properties of surface roughness than the Gaussian form and thus is adopted in the theoretical model. The calculated results are in good agreement with Hall data. The quantitative measurements of dislocations and surface roughness allow the evaluation of the relative importance of each extrinsic scattering mechanism.

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

2019 ◽  
Vol 954 ◽  
pp. 51-59
Author(s):  
Xi Duo Hu ◽  
Cheng Ming Li ◽  
Shao Yan Yang
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Electron Mobility ◽  
Atomic Scale ◽  
Free Standing ◽  
Poisson Equations ◽  
Surface Roughness Scattering ◽  
Calculation Results ◽  
Roughness Amplitude ◽  
Dimensional Electron Gas

Abstract:Electron mobility limited by surface roughness scattering in free-standing GaAs thin ribbon with an internal parabolic quantum well caused by surface state is investigated in detail. Based on analyzing the parabolic quantum well including the energy subband level, wave function and the confined potential profile in the thin ribbon by solving Schrödinger and Poisson equations self-consistently, the electron mobility could be investigated. Conclusion indicates that remote surface roughness (RSR) of the thin ribbon will change the two dimensional electron gas (2DEG) mobility through the medium of barrier height fluctuation of the parabolic well in atomic scale. Calculation results reveal that the 2DEG mobility decreases with increasing roughness amplitude, which is characterized in terms of the surface roughness height and the roughness lateral size.

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