Experimental investigation and modelling of light scattering in a-Si:H solar cells deposited on glass/ZnO:Al substrates

2002 ◽  
Vol 715 ◽  
Author(s):  
J. Krc ◽  
M. Zeman ◽  
O. Kluth ◽  
F. Smole ◽  
M. Topic
Keyword(s):  
Surface Roughness ◽  
Experimental Investigation ◽  
Solar Cells ◽  
Angular Distribution ◽  
Light Scattering ◽  
Optical Model ◽  
Distribution Functions ◽  
Interface Roughness ◽  
Scattering Parameters ◽  
Good Agreement

AbstractThe descriptive scattering parameters, haze and angular distribution functions of textured ZnO:Al transparent conductive oxides with different surface roughness are measured. An approach to determine the scattering parameters of all internal interfaces in p-i-n a-Si:H solar cells deposited on the glass/ZnO:Al substrates is presented. Using the determined scattering parameters as the input parameters of the optical model, a good agreement between the measured and simulated quantum efficiencies of the p-i-n a-Si:H solar cells with different interface roughness is achieved.

A Global Electricai-Optical Model of Thin Film Solar Cells on Textured Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
P. Chatterjee ◽  
F. Leblanc ◽  
M. Favre ◽  
J. Perrin
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
Optical Model ◽  
Semiconductor Device ◽  
Short Circuit ◽  
Transparent Conducting Oxide ◽  
Short Circuit Current ◽  
Interface Roughness ◽  
Device Structure ◽  
Cell Conversion

AbstractIn order to simulate the performance of the present day state-of-the-art multijunction solar cells in its entirety, an integrated electrical-optical model has been developed. The one-dimensional ab initio electrical model for the analysis of the transport properties of such devices can handle a very general semiconductor device structure where the material properties vary with position and the gap state properties with position and energy. The original semi-empirical optical model used takes into account both specular interference effects, and diffused reflectances and transmittances due to interface roughness. The latter are derived from angular-resolved photometric measurements and used as input parameters to the numerical programme. Comparison of the illuminated current density-voltage (J-V) characteristics, calculated on the basis of (a) a simple exponential absorption law and (b) the optical model, reveals an increase of ˜1 mA cm−2 in the short-circuit current and ˜8% in the cell conversion efficiency for case (b). Also the long wavelength quantum efficiency (QE) shows a marked improvement, while the blue QE decreases since proper account is taken of the absorption in the transparent conducting oxide and reflection from the device. The combined model is being applied to simulate the characteristics of wideband-gap-emitter-layer solar cells deposited in a three chamber conventional glow discharge reactor onto (i) highly textured SnO2 and (ii) weakly textured indium tin oxide substrates. The cells have been characterised experimentally by J-V and QE measurements. Preliminary results indicate that the integrated model matches the experimental J-V and QE data with a more realistic set of material parameters as compared to case (a).

scholarly journals Texture-Etched SnO2Glasses Applied to Silicon Thin-Film Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Bing-Rui Wu ◽  
Sin-Liang Ou ◽  
Shih-Yung Lo ◽  
Hsin-Yuan Mao ◽  
Jhen-Yu Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Solar Cells ◽  
Light Scattering ◽  
Etching Rate ◽  
Etching Process ◽  
Thin Film Solar Cells ◽  
Etching Time ◽  
Silicon Thin Film ◽  
Mixture Ratio

Transparent electrodes of tin dioxide (SnO2) on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

Modeling of a-Si:H Alloy Solar Cells on Textured Substrates

1997 ◽  
Vol 467 ◽  
Author(s):  
M. Zeman ◽  
J. H. van den Berg ◽  
L. L. A. Vosteen ◽  
J. A. Willemen ◽  
J. W. Metselaar ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Scattering ◽  
Carrier Transport ◽  
Optical Model ◽  
Scattered Light ◽  
Sensitivity Study ◽  
Scattering Coefficients ◽  
Bottom Cell ◽  
Current Matching ◽  
Lower Ratio

ABSTRACTComputer modeling is used as a tool for determining current matching in hydrogenated amorphous silicon (a-Si:H) alloy tandem cells on textured substrates. The increasing complexity of a-Si:H based solar cells requires continuous extending and testing of the computer models which are used for their simulation. To take light scattering at the textured interfaces of the cell into account we developed a multi-rough-interface optical model GENPR02 which was used for calculating the absorption profiles in the solar cells. The results of a sensitivity study of the parameters of this optical model such as the scattering coefficients of the reflected and transmitted light and the dependence of scattered light on the in-going and out-going angle are presented. In order to simulate multi-junction solar cell as a complete device we implemented a novel model for tunnel/recombination junction (TRJ), which combines the trap assisted tunneling and enhanced carrier transport in the high field region of the TRJ.The current matching conditions were determined both for a-Si:H and a-SiGe:H bottom cells, while the top cell was an a-Si:H cell. We investigated the influence of light scattering at the textured interfaces and of the thickness of the intrinsic layer of the bottom cell on the optimal ratio (i2/i1) between the thicknesses of the bottom (i2) and top (il) intrinsic layers in the current-matched cell. The results show that increasing amount of scattering at the textured interfaces leads to higher efficiencies and lower ratio (i2/i1) in the current-matched cell. The use of a-SiGe:H material in the bottom cell leads to higher efficiency and 3 to 4 times lower i2/i1 ratio than in case of a-Si:H/a-Si:H cells.

scholarly journals Laboratory Measurements of Light Scattering by Dust Particles

1996 ◽  
Vol 150 ◽  
pp. 409-413
Author(s):  
Patrick P. Combet ◽  
Philippe L. Lamy
Keyword(s):  
Light Scattering ◽  
Laser Beam ◽  
Mie Theory ◽  
Spherical Particles ◽  
Dust Particles ◽  
Laboratory Measurements ◽  
Scattering Function ◽  
Hene Laser ◽  
Set Up ◽  
Good Agreement

AbstractWe have set up an experimental device to optically study the scattering properties of dust particles. Measurements over the 8 — 174° interval of scattering angles are performed on a continuously flowing dust loaded jet illuminated by a polarized red HeNe laser beam. The scattering is averaged over the population of the dust particles in the jet, which can be determined independently, and give the “volume scattering function” for the two directions of polarization directly. While results for spherical particles are in good agreement with Mie theory, those for arbitrary particles show conspicuous deviations.

scholarly journals Compact Modelling of Electrical, Optical and Thermal Properties of Multi-Colour Power LEDs Operating on a Common PCB

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1286
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak
Keyword(s):  
Integrated Circuits ◽  
Optical Model ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Junction Temperature ◽  
Optical Parameters ◽  
Spice Simulation ◽  
Light Emitting ◽  
Proposed Model ◽  
Good Agreement

This paper concerns the problem of modelling electrical, thermal and optical properties of multi-colour power light-emitting diodes (LEDs) situated on a common PCB (Printed Circuit Board). A new form of electro-thermo-optical model of such power LEDs is proposed in the form of a subcircuit for SPICE (Simulation Program with Integrated Circuits Emphasis). With the use of this model, the currents and voltages of the considered devices, their junction temperature and selected radiometric parameters can be calculated, taking into account self-heating phenomena in each LED and mutual thermal couplings between each pair of the considered devices. The form of the formulated model is described, and a manner of parameter estimation is also proposed. The correctness and usefulness of the proposed model are verified experimentally for six power LEDs emitting light of different colours and mounted on an experimental PCB prepared by the producer of the investigated devices. Verification was performed for the investigated diodes operating alone and together. Good agreement between the results of measurements and computations was obtained. It was also proved that the main thermal and optical parameters of the investigated LEDs depend on a dominant wavelength of the emitted light.

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