scholarly journals Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

2011 ◽  
Vol 58 (5) ◽  
pp. 1371-1380 ◽  
Author(s):  
SungGeun Kim ◽  
M Luisier ◽  
A Paul ◽  
T B Boykin ◽  
G Klimeck
1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 253
Author(s):  
Yosang Jeong ◽  
Hoon Ryu

The non-equilibrium Green’s function (NEGF) is being utilized in the field of nanoscience to predict transport behaviors of electronic devices. This work explores how much performance improvement can be driven for quantum transport simulations with the aid of manycore computing, where the core numerical operation involves a recursive process of matrix multiplication. Major techniques adopted for performance enhancement are data restructuring, matrix tiling, thread scheduling, and offload computing, and we present technical details on how they are applied to optimize the performance of simulations in computing hardware, including Intel Xeon Phi Knights Landing (KNL) systems and NVIDIA general purpose graphic processing unit (GPU) devices. With a target structure of a silicon nanowire that consists of 100,000 atoms and is described with an atomistic tight-binding model, the effects of optimization techniques on the performance of simulations are rigorously tested in a KNL node equipped with two Quadro GV100 GPU devices, and we observe that computation is accelerated by a factor of up to ∼20 against the unoptimized case. The feasibility of handling large-scale workloads in a huge computing environment is also examined with nanowire simulations in a wide energy range, where good scalability is procured up to 2048 KNL nodes.


2002 ◽  
Vol 17 (1-2) ◽  
pp. 27-36 ◽  
Author(s):  
Radovan Ilic ◽  
Darko Lalic ◽  
Srboljub Stankovic

This paper describes new Monte Carlo codes for proton transport simulations in complex geometrical forms and in materials of different composition. The SRNA codes were developed for three dimensional (3D) dose distribution calculation in proton therapy and dosimetry. The model of these codes is based on the theory of proton multiple scattering and a simple model of compound nucleus decay. The developed package consists of two codes: SRNA-2KG and SRNA-VOX. The first code simulates proton transport in combined geometry that can be described by planes and second order surfaces. The second one uses the voxelized geometry of material zones and is specifically adopted for the application of patient computer tomography data. Transition probabilities for both codes are given by the SRNADAT program. In this paper, we will present the models and algorithms of our programs, as well as the results of the numerical experiments we have carried out applying them, along with the results of proton transport simulation obtained through the PETRA and GEANT programs. The simulation of the proton beam characterization by means of the Multi-Layer Faraday Cup and spatial distribution of positron emitters obtained by our program indicate the imminent application of Monte Carlo techniques in clinical practice.


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