Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

2013 ◽  
Vol 60 (10) ◽  
pp. 3176-3182 ◽  
Author(s):  
Alessandro Chini ◽  
Fabio Soci ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
Enrico Zanoni
Keyword(s):  
Activation Energy ◽  
Numerical Evaluation ◽  
Deep Levels ◽  
Self Heating ◽  
Heating Effects ◽  
Gan Hemts

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

A new compact model for AlGaN/GaN HEMTs including self-heating effects

2017 ◽  
Author(s):  
Zhang Wen ◽  
Yuehang Xu ◽  
Qingzhi Wu ◽  
Yong Zhang ◽  
Ruimin Xu ◽  
...  
Keyword(s):  
Compact Model ◽  
Self Heating ◽  
Heating Effects ◽  
Gan Hemts

scholarly journals Reliability Concerns due to Self-Heating effects in GaN HEMTs

2013 ◽  
Vol 8 (2) ◽  
pp. 78-82
Author(s):  
B. Padmanabhan ◽  
D. Vasileska ◽  
S. M. Goodnick
Keyword(s):  
High Power ◽  
High Frequency ◽  
Additional Problem ◽  
Bias Stress ◽  
Self Heating ◽  
Current Collapse ◽  
Heating Effects ◽  
Dc Bias ◽  
Gan Hemts

Current collapse phenomenon that occurs in GaN HEMTs under a moderately large DC bias stress, poses serious problems for usage of GaN technology in high-power high-frequency applications from a reliability standpoint. Additional problem in these devices operated at high biases is the appearance of self-heating effects that degrade device characteristics and, as shown in this work further amplify the problem of current collapse by changing the device electrostatics.

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

2007 ◽  
Vol 51 (6) ◽  
pp. 969-974 ◽  
Author(s):  
J. Kuzmik ◽  
S. Bychikhin ◽  
R. Lossy ◽  
H.-J. Würfl ◽  
M.-A. di Forte Poisson ◽  
...  
Keyword(s):  
Self Heating ◽  
Heating Effects ◽  
Gan Hemts

Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials

2015 ◽  
Vol 212 (5) ◽  
pp. 1130-1136 ◽  
Author(s):  
Raúl Rodríguez ◽  
Benito González ◽  
Javier García ◽  
Fetene M. Yigletu ◽  
José M. Tirado ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Self Heating ◽  
Heating Effects ◽  
Gan Hemts
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