A Bottom-Gate Indium-Gallium-Zinc Oxide Thin-Film Transistor With an Inherent Etch-Stop and Annealing-Induced Source and Drain Regions
2015 ◽
Vol 62
(2)
◽
pp. 574-579
◽
Keyword(s):
Keyword(s):
2020 ◽
Vol 41
(6)
◽
pp. 856-859
◽
Keyword(s):
2020 ◽
Vol 30
(34)
◽
pp. 2003285
◽
2016 ◽
Vol 213
(7)
◽
pp. 1873-1877
◽
2017 ◽
Vol 48
(1)
◽
pp. 1231-1233
◽
Keyword(s):
2014 ◽