Low Interface Trap Density and High Breakdown Electric Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

2016 ◽  
Vol 63 (4) ◽  
pp. 1795-1801 ◽  
Author(s):  
Tadashi Watanabe ◽  
Akinobu Teramoto ◽  
Yukihisa Nakao ◽  
Shigetoshi Sugawa ◽  
Tadahiro Ohmi
Keyword(s):  
Chemical Vapor Deposition ◽  
Electric Field ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Breakdown Electric Field ◽  
Plasma Pretreatment ◽  
High Breakdown Electric Field

Enhancement of Selective Chemical Vapor Deposition of Copper by Nitrogen Plasma Pretreatment

1998 ◽  
Vol 37 (Part 2, No. 4B) ◽  
pp. L462-L464 ◽  
Author(s):  
Young Suk Kim ◽  
Dong Joon Kim ◽  
Sung Kwan Kwak ◽  
Eun Kyu Kim ◽  
Suk-Ki Min ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Plasma Pretreatment ◽  
Selective Chemical

ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition

2015 ◽  
Vol 3 (18) ◽  
pp. 4678-4682 ◽  
Author(s):  
Qiu-Ju Feng ◽  
Hong-Wei Liang ◽  
Yi-Ying Mei ◽  
Jia-Yuan Liu ◽  
C. C. Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electric Field ◽  
Vapor Deposition ◽  
Large Scale ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Light Emitting

A single large-scale ZnO microwire (MW) homojunction LED is fabricated by an electric field assisted chemical vapor deposition method.

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