Universal Compact Model for Thin-Film Transistors and Circuit Simulation for Low-Cost Flexible Large Area Electronics

AbstractThe technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

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HfZnO/ZnO Heterostructures Fabricated Using Low-Cost Large-Area Compatible Sputtering Processes

MRS Proceedings ◽

10.1557/opl.2015.172 ◽

2015 ◽

Vol 1731 ◽

Author(s):

Chih-Hung Li ◽

Jian-Zhang Chen ◽

I-Chun Cheng

Keyword(s):

Thin Film ◽

Electrical Resistance ◽

Thin Film Transistors ◽

Carrier Mobility ◽

Annealing Temperature ◽

Low Cost ◽

Zno Thin Films ◽

Zno Thin Film ◽

Large Area ◽

Apparent Decrease

ABSTRACTWe investigated the electrical properties of the rf-sputtered HfxZn1-xO/ZnO heterostructures. The thermal annealing on ZnO prior to the HfxZn1-xO deposition greatly influences the properties of the heterostructures. A highly conductive interface formed at the interface between HfxZn1-xO and ZnO thin films as the ZnO annealing temperature exceeded 500°C, leading to the apparent decrease of the electrical resistance. The resistance decreased with an increase of either thickness or Hf content of the HfxZn1-xO capping layer. The Hf0.05Zn0.95O/ZnO heterostructure with a 200-nm-thick 600°C-annealed ZnO exhibits a carrier mobility of 14.3 cm2V-1s-1 and a sheet carrier concentration of 1.93×1013 cm-2; the corresponding values for the bare ZnO thin film are 0.47 cm2V-1s-1 and 2.27×1012 cm-2, respectively. Rf-sputtered HfZnO/ZnO heterostructures can potentially be used to increase the carrier mobility of thin-film transistors in large-area electronics.

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Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors

MRS Advances ◽

10.1557/adv.2018.25 ◽

2018 ◽

Vol 3 (33) ◽

pp. 1871-1876 ◽

Cited By ~ 2

Author(s):

Chen Jiang ◽

Hanbin Ma ◽

Arokia Nathan

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Low Voltage ◽

Low Cost ◽

Organic Thin Film Transistors ◽

Operating Voltage ◽

Wearable Electronics ◽

Organic Thin Film ◽

Large Area ◽

Mechanical Bending

Abstract:All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (<3 V), small subthreshold slope (128 mV/decade), good mobility (0.1 cm2 V−1 s−1), close-to-zero threshold voltage (−0.16 V), and high on/off ratio (>105). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.

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Continued Development of R.F. Sputtered a-Si:H Thin-Film Transistors Towards an All-Sputtered Device

MRS Proceedings ◽

10.1557/proc-49-367 ◽

1985 ◽

Vol 49 ◽

Author(s):

J. Allison ◽

D.P. Turner ◽

D.C. Cousins

Keyword(s):

Thin Film ◽

Liquid Crystal ◽

Thin Film Transistors ◽

Crystalline Silicon ◽

Liquid Crystal Display ◽

Low Cost ◽

Silicon Oxynitride ◽

Large Area ◽

Current Ratio ◽

Crystalline Substrate

AbstractPrototype thin film transistors have previously been fabricated by r.f. magnetron sputtering of a-Si:H on to CVD Si02 using a crystalline silicon gate. These devices exhibited an on/off current ratio of four orders of magnitude for gate voltages as low as 10 volts. This demonstrated the suitability of the sputtered layer for liquid crystal display applications.The use of a crystalline substrate negates the advantages of using a thin film,such as large area capability and low cost, so we have turned our attention to the provision of a sputtered dielectric. Several candidate materials have been considered, including Si02, Si3N4, Ta205, AIN and Ti02. We present the characteristics of our first all-sputtered transistor utilising an Si02 gate,and assess the dielectric properties and potential of other materials, with emphasis on the silicon oxynitride system.

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