Impact of Gaussian Doping Profile and Negative Capacitance Effect on Double-Gate Junctionless Transistors (DGJLTs)

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2832843 ◽

2018 ◽

Vol 65 (7) ◽

pp. 2699-2706 ◽

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Doping Profile ◽

Negative Capacitance ◽

Double Gate ◽

Capacitance Effect ◽

Junctionless Transistors

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Analytical drain current model for long-channel double-gate negative capacitance junctionless transistors using Landau theory

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2016.7785204 ◽

2016 ◽

Author(s):

Chunsheng Jiang ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Landau Theory ◽

Current Model ◽

Drain Current ◽

Negative Capacitance ◽

Double Gate ◽

Junctionless Transistors ◽

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Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

Superlattices and Microstructures ◽

10.1016/j.spmi.2018.03.001 ◽

2018 ◽

Vol 117 ◽

pp. 189-199 ◽

Author(s):

Monika Bansal ◽

Harsupreet Kaur

Keyword(s):

Interface Trap ◽

Negative Capacitance ◽

Double Gate ◽

Capacitance Effect ◽

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Simulation-based study of negative capacitance double-gate junctionless transistors with ferroelectric gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2016.09.001 ◽

2016 ◽

Vol 126 ◽

pp. 130-135 ◽

Author(s):

Chunsheng Jiang ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Gate Dielectric ◽

Negative Capacitance ◽

Double Gate ◽

Simulation Based ◽

Junctionless Transistors

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Analytical model to study temperature dependent Negative Capacitance effect on long channel Double Gate Ferroelectric Junctionless Transistor

2016 Asia-Pacific Microwave Conference (APMC) ◽

10.1109/apmc.2016.7931309 ◽

2016 ◽

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Analytical Model ◽

Negative Capacitance ◽

Double Gate ◽

Temperature Dependent ◽

Capacitance Effect ◽

Junctionless Transistor ◽

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On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FET

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad49475.2020.9241628 ◽

2020 ◽

Author(s):

Masaharu Kobayashi

Keyword(s):

Physical Mechanism ◽

Negative Capacitance ◽

Capacitance Effect

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Hysteresis-Free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges

Physical Review Applied ◽

10.1103/physrevapplied.15.034048 ◽

2021 ◽

Vol 15 (3) ◽

Author(s):

Chia-Sheng Hsu ◽

Sou-Chi Chang ◽

Dmitri E. Nikonov ◽

Ian A. Young ◽

Azad Naeemi

Keyword(s):

Negative Capacitance ◽

Capacitance Effect

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Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors

Nano Letters ◽

10.1021/acs.nanolett.7b01584 ◽

2017 ◽

Vol 17 (8) ◽

pp. 4801-4806 ◽

Author(s):

Felicia A. McGuire ◽

Yuh-Chen Lin ◽

Katherine Price ◽

G. Bruce Rayner ◽

Sourabh Khandelwal ◽

...

Keyword(s):

Negative Capacitance ◽

Capacitance Effect

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Design considerations of underlapped source/drain regions with the Gaussian doping profile in nano-double-gate MOSFETs: A quantum simulation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2012.09.019 ◽

2013 ◽

Vol 16 (2) ◽

pp. 311-317 ◽

Author(s):

Morteza Charmi ◽

Ali A. Orouji ◽

Hamid R. Mashayekhi

Keyword(s):

Quantum Simulation ◽

Doping Profile ◽

Double Gate ◽

Design Considerations

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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

2009 International Multimedia, Signal Processing and Communication Technologies ◽

10.1109/mspct.2009.5164172 ◽

2009 ◽

Author(s):

P.K. Tiwari ◽

S. Kumar ◽

S. Mittal ◽

V. Srivastava ◽

U. Pandey ◽

...

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Channel Potential

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2D Analysis of Breakdown Voltages for Device Dimension of Double Gate MOSFET Using Nonlinear Doping Profile

Lecture Notes in Electrical Engineering - Future Information Communication Technology and Applications ◽

10.1007/978-94-007-6516-0_44 ◽

2013 ◽

pp. 409-417

Author(s):

Hakkee Jung ◽

Dongsoo Cheong

Keyword(s):

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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