Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/ InGaN Heterojunction

2018 ◽  
Vol 65 (12) ◽  
pp. 5373-5380 ◽  
Author(s):  
Zhiting Lin ◽  
Xiaofeng Chen ◽  
Yuhan Zhu ◽  
Xiwu Chen ◽  
Liegeng Huang ◽  
...  
Keyword(s):  
Author(s):  
H.-S. Philip Wong ◽  
Deji Akinwande

1995 ◽  
Author(s):  
S. D. Russell ◽  
W. B. Dubbelday ◽  
R. L. Shimabukuro ◽  
P. R. De La Houssaye

Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...


APL Materials ◽  
2021 ◽  
Vol 9 (5) ◽  
pp. 050702
Author(s):  
D. Ielmini ◽  
Z. Wang ◽  
Y. Liu
Keyword(s):  

1963 ◽  
Vol 31 (3) ◽  
pp. 220-221
Author(s):  
Allen Nussbaum ◽  
E. T. Jaynes

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