ABSTRACTLow-frequency noise measurements were performed on a number of AlGaN/GaN HEMTs with different gate recess depths, which were formed by dry etching. Detailed characterizations of the low-frequency noise properties were performed on the devices as a function of as a function of hot-electron stressing conducted at VD = 10 V and VG = -1.5 V. The room temperature voltage noise power spectral density, SV(ƒ), of the devices were found to show 1/ƒ dependence. A comparison of SV(ƒ) measured from different devices clearly indicate increase in the noise levels for the devices with large recess depths, reflecting the degradation caused by ion-impact induced damage during recess formation. Furthermore, the results of low-frequency noise measurements showed fast degradations for the devices with larger gate recess depths. Our experimental data clearly show that the dry etching process has induced damages in gates.
