Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Chinese Physics B ◽

10.1088/1674-1056/22/1/017202 ◽

2013 ◽

Vol 22 (1) ◽

pp. 017202 ◽

Cited By ~ 8

Author(s):

Xue-Feng Zhang ◽

Li Wang ◽

Jie Liu ◽

Lai Wei ◽

Jian Xu

Keyword(s):

Electrical Characteristics ◽

Gan Hemts

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Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Journal of Electronic Materials ◽

10.1007/s11664-004-0202-y ◽

2004 ◽

Vol 33 (5) ◽

pp. 456-459 ◽

Cited By ~ 6

Author(s):

Z. -Q. Fang ◽

D. C. Look ◽

R. Chandrasekaran ◽

S. Rao ◽

S. E. Saddow

Keyword(s):

Chemical Vapor Deposition ◽

Epitaxial Layer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Electrical Characteristics ◽

Porous Sic

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DEVELOPMENT AND MODELLING OF HIGH SPREAD CONDUCTIVITY EARTH ELECTRODES FOR COMPLEX EARTHING ARRANGEMENTS

Bulletin of the National Technical University "KhPI". Series: Energy: Reliability and Energy Efficiency ◽

10.20998/2224-0349.2021.01.03 ◽

2021 ◽

pp. 16-22

Author(s):

Vyacheslav Balalaiev ◽

Olena Fedoseenko

Keyword(s):

Reference Model ◽

Layer Structure ◽

Potential Method ◽

Equivalent Model ◽

Design Parameters ◽

Electrical Characteristics ◽

Electric Circuits ◽

Distributed Parameters ◽

Normalized Parameters ◽

Earth Electrode

The analysis of methods for calculating the electrical characteristics of earth electrodes in case of emergency currents of industrial frequency flowing through the elements of earthing arrangements is carried out. A method for improving complex earthing arrangements of electrical installations by optimization of their design parameters is proposed. The proposed method consists in installing an artificial earth electrode with an increased contact area of its surface with the ground, which makes it possible to increase the conductivity of earthing spreading. The use of these electrodes on the territory of projected or operating electrical installations ensures that the values of the normalized parameters of earthing arrangements are brought to permissible values. The use of the method given in the calculations of earthing arrangements requires the replacement of volumetric earth electrodes with a set of linear vertical electrodes. The design model is substantiated by equivalent electrical characteristics relative to the two-layer model of the electrical structure of the earth. The equivalent model was obtained by a given approximation of the electrical characteristics of a set of straight electrodes in the process of increasing their number to the equivalent characteristics of the reference model. In turn, the determination of the characteristics of the reference model was carried out directly by solving the boundary value problem for the potential satisfying Laplace equation using finite difference method. Theoretical investigations using induced potential method and methods of calculation of branched electric circuits with distributed parameters for calculation of electric field and resistance of the complex non-equipotential earth electrode in the ground with two-layer structure have been carried out. The developed electrodes of increased spread conductivity are mounted as experimental samples and are involved in the formation of the electrical characteristics of the earthing arrangements.

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