Influence of Cu Doping in Si–Te-Based Chalcogenide Glasses and Thin Films: Electrical Switching, Morphological and Raman Studies

2021 ◽  
Vol 68 (3) ◽  
pp. 1196-1201
Author(s):  
Diptoshi Roy ◽  
B. Tanujit ◽  
K. B. Jagannatha ◽  
S. Asokan ◽  
Chandasree Das
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
A. Ahmed Simon ◽  
B. Badamchi ◽  
H. Subbaraman ◽  
Y. Sakaguchi ◽  
L. Jones ◽  
...  

AbstractChalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.


RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10212-10223
Author(s):  
Abhijit Rudra Paul ◽  
Bapi Dey ◽  
Sudip Suklabaidya ◽  
Syed Arshad Hussain ◽  
Swapan Majumdar

In this article, we demonstrate the design, synthesis and physico-chemical characteristics, including electrical switching behaviours of long alkoxy-appended coumarin carboxylate/carboxylic acid in thin films.


2006 ◽  
Vol 55 (5) ◽  
pp. 2567
Author(s):  
Li Bao-He ◽  
Feng Chun ◽  
Yang Tao ◽  
Zhai Zhong-Hai ◽  
Teng Jiao ◽  
...  
Keyword(s):  

2009 ◽  
Vol 58 (7) ◽  
pp. 4953
Author(s):  
Jin Ke-Xin ◽  
Zhao Sheng-Gui ◽  
Chen Chang-Le

2020 ◽  
Vol 709 ◽  
pp. 138044
Author(s):  
Xueqiong Su ◽  
Yong Pan ◽  
Dongwen Gao ◽  
Shufeng Li ◽  
Jin Wang ◽  
...  

2020 ◽  
Vol 854 ◽  
pp. 103-108
Author(s):  
A.L. Pergament ◽  
O.Ya. Berezina ◽  
S.V. Burdyukh ◽  
V.P. Zlomanov ◽  
Evgeniy A. Tutov

Vanadium oxide films have been fabricated by the acetylacetonate and triethoxy vanadyl sol-gel methods on silicon substrates, as well as by magnetron sputtering on glass-ceramic substrates. Additional annealing in reducing atmosphere results in formation of vanadium dioxide or mixed phases with a VO2 predominance. The obtained films demonstrate the metal-insulator transition and electrical switching. In the films produced from triethoxy vanadyl, the peculiarities of electrical properties are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. Also, the effect of doping with hydrogen by means of plasma-immersion ion implantation on the properties of vanadium dioxide is explored. It is shown that the transition parameters in VO2 thin films depend on the hydrogen implantation dose. At doses exceeding a certain threshold value, the films are metallized, and the phase transition no longer occurs.


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