Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs

2021 ◽  
pp. 1-6
Author(s):  
K. Muthuseenu ◽  
H. J. Barnaby ◽  
K. F. Galloway ◽  
A. E. Koziukov ◽  
T. A. Maksimenko ◽  
...  
Keyword(s):  
High Voltage ◽  
Single Event ◽  
Power Mosfets

scholarly journals Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

2020 ◽  
Vol 67 (1) ◽  
pp. 22-28 ◽  
Author(s):  
D. R. Ball ◽  
J. M. Hutson ◽  
A. Javanainen ◽  
J.-M. Lauenstein ◽  
K. F. Galloway ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Single Event ◽  
Power Mosfets ◽  
Energy Pulse

Effects of Breakdown Voltage on Single Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
D.R. Ball ◽  
K.F. Galloway ◽  
R.A. Johnson ◽  
M.L. Alles ◽  
A.L. Sternberg ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Single Event ◽  
Power Mosfets

Mechanism for single-event burnout of power MOSFETs and its characterization technique

1992 ◽  
Vol 39 (6) ◽  
pp. 1698-1703 ◽  
Author(s):  
S. Kuboyama ◽  
S. Matsuda ◽  
T. Kanno ◽  
T. Ishii
Keyword(s):  
Single Event ◽  
Power Mosfets ◽  
Characterization Technique

scholarly journals Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs

2021 ◽  
Author(s):  
Chao Peng ◽  
Zhifeng Lei ◽  
Ziwen Chen ◽  
Shaozhong Yue ◽  
Zhangang Zhang ◽  
...  
Keyword(s):  
Simulation Studies ◽  
Single Event ◽  
Power Mosfets ◽  
Radiation Induced

Optoelectronic CMOS Transistors: Performance Advantages for Sub-7nm ULSI, RF ASIC, Memories, and Power MOSFETs

MRS Advances ◽  
2019 ◽  
Vol 4 (48) ◽  
pp. 2585-2591
Author(s):  
James N. Pan
Keyword(s):  
Low Power ◽  
High Voltage ◽  
Series Resistance ◽  
Access Time ◽  
Cmos Process ◽  
Output Current ◽  
Process Flow ◽  
Power Mosfets ◽  
Cmos Transistors ◽  
Low Power Cmos

AbstractSubstantial increase of output current, and Ion / Ioff ratio for sub-7nm low power CMOS transistors, can be accomplished using a novel optoelectronic technology, which is 100% compatible with existing CMOS process flow. For RF or mixed signal ASICs, adding photonic components may improve the cut-off frequency, and reduce series resistance. Products that utilize power regulating devices, such as power MOSFETs, will benefit from the optoelectronic configuration to achieve much lower Rdson and high voltage at the same time. For semiconductor memories, such as DRAM or FLASH, the photonic technique may reduce the ERASE / WRITE / access time and improve the reliability.

Impact of Device Structure on Neutron-Induced Single-Event Effect in SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano
Keyword(s):  
Threshold Voltage ◽  
Drift Region ◽  
Single Event ◽  
Drain Voltage ◽  
Device Structure ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Single Event Effect ◽  
Significant Difference ◽  
Avalanche Breakdown Voltage

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.

Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs

2020 ◽  
Vol 67 (9) ◽  
pp. 3698-3704
Author(s):  
Jiang Lu ◽  
Jiawei Liu ◽  
Xiaoli Tian ◽  
Hong Chen ◽  
Yidan Tang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Single Event ◽  
Power Mosfets ◽  
Event Response

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

2007 ◽  
Vol 28 (7) ◽  
pp. 587-589 ◽  
Author(s):  
Anant Agarwal ◽  
Husna Fatima ◽  
Sarah Haney ◽  
Sei-Hyung Ryu
Keyword(s):  
High Voltage ◽  
Degradation Mechanism ◽  
Power Mosfets
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