High-Current Omega-Shaped Gated MoS₂ Transistors
1993 ◽
Vol 40
(5)
◽
pp. 980-985
◽
1988 ◽
Vol 46
◽
pp. 474-475
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
1979 ◽
Vol 40
(C7)
◽
pp. C7-303-C7-304
1979 ◽
Vol 40
(C7)
◽
pp. C7-281-C7-282
1988 ◽
Vol 49
(C4)
◽
pp. C4-651-C4-655
◽
1979 ◽
Vol 129
(9)
◽
pp. 87
◽
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