Gallium arsenide photoconductive switch in high-voltage analogue application

2002 ◽  
Author(s):  
Y. Zhang ◽  
R. Miller ◽  
D.M. Ryder ◽  
A.R. Piercy ◽  
E.T. Thomson
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Photoconductive Switch

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Picosecond high-voltage drift diodes based on gallium arsenide

2003 ◽  
Vol 37 (12) ◽  
pp. 1425-1427 ◽  
Author(s):  
A. V. Rozhkov ◽  
V. A. Kozlov
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Voltage Drift

Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method

1993 ◽  
Vol 36 (12) ◽  
pp. 1749-1755 ◽  
Author(s):  
G. Ashkinazi ◽  
Tz. Hadas ◽  
B. Meyler ◽  
M. Nathan ◽  
L. Zolotarevski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
High Voltage ◽  
Liquid Phase Epitaxy ◽  
Device Characterization

High Deposition Rate, Thick a-Si Films for Electrophotographic Applications

1987 ◽  
Vol 95 ◽  
Author(s):  
J. Del Cueto ◽  
B. Von Roedern ◽  
A. Madan
Keyword(s):  
High Voltage ◽  
Switching Time ◽  
Cost Effective ◽  
Measured Parameter ◽  
High Deposition Rate ◽  
Deposition Rates ◽  
Photoconductive Switch ◽  
Effective Manner ◽  
Si Films ◽  
Silicon Based

The attraction for amorphous Silicon based alloys (a-Si) stems in large part from its ease in its depositing uniformly over large areas in a cost effective manner. We here at Glasstech Solar, Inc. (GSI) wish to report on the development of a-Si films for electrophotographic applications. For this specific purpose we have developed thick films (˜30–40 μm) of intrinsic a-Si deposited on TCO at deposition rates of up to 14 Å/S We tested the material for its photoconductivity and breakdown voltage, and its suitability for the application at hand with one measured parameter, the 400 volt switching time, TΔ400. Essentially the goal consisted of developing a high voltage photoconductive switch, that would swing 400 volts at the terminals in a few μsec.

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