High voltage, high Q epitaxial gallium arsenide diodes

1962 ◽  
Author(s):  
H. Kressel ◽  
N. Goldsmith
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Q

High voltage, high Q epitaxial gallium arsenide diodes

1963 ◽  
Vol 10 (2) ◽  
pp. 99-99
Author(s):  
H. Kressel ◽  
N. Goldsmith
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Q

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

Picosecond high-voltage drift diodes based on gallium arsenide

2003 ◽  
Vol 37 (12) ◽  
pp. 1425-1427 ◽  
Author(s):  
A. V. Rozhkov ◽  
V. A. Kozlov
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
Voltage Drift

Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method

1993 ◽  
Vol 36 (12) ◽  
pp. 1749-1755 ◽  
Author(s):  
G. Ashkinazi ◽  
Tz. Hadas ◽  
B. Meyler ◽  
M. Nathan ◽  
L. Zolotarevski ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
High Voltage ◽  
Liquid Phase Epitaxy ◽  
Device Characterization

HTS High Q Resonant Controller

2007 ◽  
Vol 546-549 ◽  
pp. 1979-1984
Author(s):  
Jian Xun Jin ◽  
Chang Ming Zhang ◽  
You Guang Guo ◽  
Jian Guo Zhu
Keyword(s):  
High Voltage ◽  
Theoretical Study ◽  
Current Control ◽  
Resonant Circuit ◽  
High Current ◽  
High Tc ◽  
High Q ◽  
Resonant Controller ◽  
Voltage Generation ◽  
Very High

High Tc superconductor (HTS) technology has been used to develop an advanced high Q resonant circuit and its devices. With a HTS, a very high Q circuit can be achieved; consequently special aspects such as high voltage generation and high current control can be theoretically and practically realized. Theoretical study has been carried out, as well as a practical approach has been made for the concept verification. This paper describes the theory of this high Q resonant circuit and the operational principle of its high voltage generation and current control.

scholarly journals Photoresistors made of CdхHg1-хTematerial(a review)

2021 ◽  
Vol 9 (2) ◽  
pp. 112-127
Keyword(s):  
Gallium Arsenide ◽  
Solid Solutions ◽  
High Voltage ◽  
Power Output ◽  
Liquid Nitrogen Temperature ◽  
Charge Carriers ◽  
Specific Detection ◽  
Domestic Technology ◽  
A Value ◽  
Highly Sensitive

The review analyzes the development of domestic technology for manufacturing highly sensitive and stable photoresistors from solid solutions of the CdxHg1-xTe tri-ple system since the 70s of the last century. The volt sensitivity of modern photoresistors made of heteroepitaxial structures n–CdxHg1-xTe, obtained by molecu-lar beam epitaxyon a gallium arsenide substrate, in the spectral range of 8–12 mi-crons with a photosensitive pixelsize of 5050 microns, operating under nonequilibriumcon-ditions of the exclusion of minority charge carriers, reaches a value of Suλmax107V/W with a specific detection capacity D*λmax (1200.1,14o) of more than51011cmGz1/2W-1at liquid nitrogen temperature. The high voltage sensi-tivity and low power output (510-7W) of photoresistors in the design of a with a radialarrangement of contactsallow you to create focal matrices based on them with a number of pixels of106.

scholarly journals Electrical Characterizations of 35-kV Semi-Insulating Gallium Arsenide Photoconductive Switch

Photonics ◽  
2021 ◽  
Vol 8 (9) ◽  
pp. 385
Author(s):  
Cheng Ma ◽  
Meilin Wu ◽  
Wennan Wang ◽  
Yaqiong Jia ◽  
Wei Shi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Gain ◽  
Photoconductive Switch ◽  
Semiconductor Switches ◽  
Avalanche Gain ◽  
Semiconductor Switch ◽  
The Stability ◽  
Electrical Characterizations ◽  
State Resistance

In this paper, a three-layer GaAs photoconductive semiconductor switch (GaAs PCSS) is designed to withstand high voltage from 20 to 35 kV. The maximum avalanche gain and minimum on-state resistance of GaAs PCSS are 1385 and 0.58 Ω, respectively, which are the highest values reported to date. Finally, the influence of the bias voltage on the avalanche stability is analyzed. The stability of the GaAs PCSS is evaluated and calculated. The results show that the jitter values at the bias voltages of 30 kV and 35 kV are 164.3 ps and 106.9 ps, respectively. This work provides guidance for the design of semiconductor switches with high voltage and high gain.

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