Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric

2006 ◽  
Vol 5 (4) ◽  
pp. 379-384 ◽  
Author(s):  
Zhengchun Liu ◽  
Fengliang Xue ◽  
Yi Su ◽  
Y.M. Lvov ◽  
K. Varahramyan
Keyword(s):  
Thin Film ◽  
Gold Nanoparticles ◽  
Memory Effect ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Self Assembled

Fast Development of Self‐Assembled, Highly Oriented Polymer Thin Film and Observation of Dual Sensing Behavior of Thin Film Transistor for Ammonia Vapor

2019 ◽  
Vol 220 (11) ◽  
pp. 1900010
Author(s):  
Praveen Kumar Sahu ◽  
Lalit Chandra ◽  
Rajiv K. Pandey ◽  
Niraj Singh Mehta ◽  
R. Dwivedi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Ammonia Vapor ◽  
Oriented Polymer ◽  
Polymer Thin Film ◽  
Fast Development ◽  
Self Assembled ◽  
Dual Sensing

scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

Control of Charge Trap Density in Polymer Thin Film Transistor Using Self-assembled Monolayer with Different Alkyl Chain Length

Polymer Korea ◽  
2019 ◽  
Vol 43 (4) ◽  
pp. 553-558
Author(s):  
Jun Hwa Park ◽  
Yu Ra Choi ◽  
Bo Yeon Min ◽  
Jun Young Moon ◽  
Jae Won Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chain Length ◽  
Alkyl Chain ◽  
Thin Film Transistor ◽  
Alkyl Chain Length ◽  
Trap Density ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Charge Trap ◽  
Self Assembled

Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric

2008 ◽  
Vol 93 (7) ◽  
pp. 073305 ◽  
Author(s):  
Flora M. Li ◽  
Parul Dhagat ◽  
Hanna M. Haverinen ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Polymer Thin Film ◽  
Surface Pretreatment

Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

2009 ◽  
Vol 53 (6) ◽  
pp. 621-625 ◽  
Author(s):  
Jae Bon Koo ◽  
Seong Yeol Kang ◽  
In Kyu You ◽  
Kyung Soo Suh
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Ozone Treatment ◽  
Uv Ozone

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Barium Zirconate ◽  
Operating Voltage ◽  
Metal Oxide Thin Film

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.

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