Ultraviolet Detection Properties of p-Si/n-TiO2Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study

2016 ◽  
Vol 15 (2) ◽  
pp. 193-200 ◽  
Author(s):  
Gopal Rawat ◽  
Divya Somvanshi ◽  
Hemant Kumar ◽  
Yogesh Kumar ◽  
Chandan Kumar ◽  
...  
2010 ◽  
Vol 19 (2) ◽  
pp. 149-154 ◽  
Author(s):  
V. D. Falcão ◽  
D. O. Miranda ◽  
M. E. L. Sabino ◽  
T. D. O. Moura ◽  
A. S. A. C Diniz ◽  
...  

2007 ◽  
Vol 24 (7) ◽  
pp. 1964-1966 ◽  
Author(s):  
Yao Jian-Ke ◽  
Li Hai-Yuan ◽  
Fan Zheng-Xiu ◽  
Tang Yong-Xing ◽  
Jin Yun-Xia ◽  
...  

2020 ◽  
Vol 101 ◽  
pp. 109739 ◽  
Author(s):  
Xiaoyu Sun ◽  
Xiaozhuang Xu ◽  
Guanyu Song ◽  
Jielei Tu ◽  
Lei Li ◽  
...  

2010 ◽  
Vol 207 (8) ◽  
pp. 1900-1904 ◽  
Author(s):  
A. Khoury ◽  
R. al Asmar ◽  
M. Abdallah ◽  
G. El Hajj Moussa ◽  
A. Foucaran

1990 ◽  
Vol 188 ◽  
Author(s):  
Kenneth D. Cornett ◽  
B. D. Fabes ◽  
W. C. Oliver

ABSTRACTSilica coatings with as-deposited densities ranging from approximately 50-100% were deposited on sapphire substrates by electron beam evaporation and sol-gel techniques. The shrinkage, hardness, and etch rates of the coatings were measured after various heat treatments. Differences in shrinkage indicated that hardness was not controlled by bulk porosity alone. Most films exhibited a surface “crust” that was significantly harder, and etched more slowly than the interior of the sample. We propose that the differences in mechanical and chemical behavior are caused by Si-O network reorganization starting at the film/air interface.


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