Post-Gate Plasma and Sputter Process Effects on the Radiation Hardness of Metal Gate CMOS Integrated Circuits

1978 ◽  
Vol 25 (6) ◽  
pp. 1459-1464 ◽  
Author(s):  
Richard E. Anderson
1987 ◽  
Vol 34 (6) ◽  
pp. 1769-1774 ◽  
Author(s):  
C. E. Barnes ◽  
J. G. Rollins ◽  
D. Hachey

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.


1989 ◽  
Vol 25 (17) ◽  
pp. 1133 ◽  
Author(s):  
S.E. Nordquist ◽  
J.W. Haslett ◽  
F.N. Trofimenkoff

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