High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

2017 ◽  
Vol 60 (12) ◽  
Author(s):  
Jiaqi Liu ◽  
Yuanfu Zhao ◽  
Liang Wang ◽  
Dan Wang ◽  
Hongchao Zheng ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Heavy Ion ◽  
High Energy ◽  
Single Event ◽  
Single Event Transient ◽  
High Energy Proton ◽  
Energy Proton

scholarly journals Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device

Symmetry ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 2030
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Tao Liu ◽  
You-Mei Sun ◽  
Jie Liu
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Low Energy ◽  
Single Event Upset ◽  
Single Event ◽  
High Energy Proton ◽  
Orbital Parameters ◽  
Energy Proton ◽  
Orbital Height ◽  
Selection Of

The on-orbit single-event upset (SEU) rate of nanodevices is closely related to the orbital parameters. In this paper, the on-orbit SEU rate (OOSR) induced by a heavy ion (HI), high-energy proton (HEP) and low-energy proton (LEP) for a 65 nm SRAM device is calculated by using the software SPACE RADIATION under different orbits based on the experimental data. The results indicate that the OOSR induced by the HI, HEP and LEP varies with the orbital parameters. In particular, the orbital height, inclination and shieling thickness are the key parameters that affect the contribution of the LEP to the total OOSR. Our results provide guidance for the selection of nanodevices on different orbits.

scholarly journals RHBD Techniques to Mitigate SEU and SET in CMOS Frequency Synthesizers

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 690 ◽  
Author(s):  
V. Díez-Acereda ◽  
Sunil L. Khemchandani ◽  
J. del Pino ◽  
S. Mateos-Angulo
Keyword(s):  
Radiation Effects ◽  
Frequency Synthesizer ◽  
Cmos Technology ◽  
High Energy ◽  
Frequency Synthesizers ◽  
High Energy Particle ◽  
Single Event ◽  
Single Event Transient ◽  
Effects Of Radiation ◽  
Radiation Hardening By Design

This paper presents a thorough study of radiation effects on a frequency synthesizer designed in a 0.18 μ m CMOS technology. In CMOS devices, the effect of a high energy particle impact can be modeled by a current pulse connected to the drain of the transistors. The effects of SET (single event transient) and SEU (single event upset) were analyzed connecting current pulses to the drains of all the transistors and analyzing the amplitude variations and phase shifts obtained at the output nodes. Following this procedure, the most sensitive circuits were detected. This paper proposes a combination of radiation hardening-by-design techniques (RHBD) such as resistor–capacitor (RC) filtering or local circuit-redundancy to mitigate the effects of radiation. The proposed modifications make the frequency synthesizer more robust against radiation.

High energy proton emission in heavy ion reactions close to the Fermi energy

2000 ◽  
Vol 471 (4) ◽  
pp. 339-345 ◽  
Author(s):  
R. Coniglione ◽  
P. Sapienza ◽  
E. Migneco ◽  
C. Agodi ◽  
R. Alba ◽  
...  
Keyword(s):  
Fermi Energy ◽  
Heavy Ion ◽  
High Energy ◽  
Proton Emission ◽  
High Energy Proton ◽  
Heavy Ion Reactions ◽  
Energy Proton

scholarly journals Effect of Gate Dielectrics on Characteristics of High-Energy Proton-Irradiated AlGaN/GaN MISHEMTs

2021 ◽  
pp. 109473
Author(s):  
Jun-Hyeok Lee ◽  
Dong-Seok Kim ◽  
Jeong-Gil Kim ◽  
Woo-Hyun Ahn ◽  
Youngho Bae ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
High Energy ◽  
High Energy Proton ◽  
Energy Proton
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