Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

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Supply voltage dependence of single event upset sensitivity in diverse SRAM devices

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS) ◽

10.1109/icrms.2014.7107149 ◽

2014 ◽

Cited By ~ 3

Author(s):

Zhangang Zhang ◽

Jie Liu ◽

Youmei Sun ◽

Mingdong Hou ◽

Teng Tong ◽

...

Keyword(s):

Voltage Dependence ◽

Supply Voltage ◽

Single Event Upset ◽

Single Event

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ECL-Based SiC Logic Circuits for Extreme Temperatures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.910 ◽

2015 ◽

Vol 821-823 ◽

pp. 910-913 ◽

Cited By ~ 10

Author(s):

Luigia Lanni ◽

Bengt Gunnar Malm ◽

Mikael Östling ◽

Carl Mikael Zetterling

Keyword(s):

Power Consumption ◽

Oscillation Frequency ◽

Digital Circuits ◽

Supply Voltage ◽

Logic Circuits ◽

Ring Oscillator ◽

Extreme Temperatures ◽

Temperature Range ◽

Stable Noise ◽

Gate Design

Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with-15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delay-power consumption product in the range 100 - 200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.

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Total Ionizing Dose Effects on a Delay-Based Physical Unclonable Function Implemented in FPGAs

Electronics ◽

10.3390/electronics7090163 ◽

2018 ◽

Vol 7 (9) ◽

pp. 163 ◽

Cited By ~ 5

Author(s):

Honorio Martin ◽

Pedro Martin-Holgado ◽

Yolanda Morilla ◽

Luis Entrena ◽

Enrique San-Millan

Keyword(s):

Low Cost ◽

Ring Oscillator ◽

Radiation Environment ◽

Key Generation ◽

Total Ionizing Dose ◽

Space Applications ◽

Physical Unclonable Functions ◽

Dose Effects ◽

Total Ionizing Dose Effects

Physical Unclonable Functions (PUFs) are hardware security primitives that are increasingly being used for authentication and key generation in ICs and FPGAs. For space systems, they are a promising approach to meet the needs for secure communications at low cost. To this purpose, it is essential to determine if they are reliable in the space radiation environment. In this work we evaluate the Total Ionizing Dose effects on a delay-based PUF implemented in SRAM-FPGA, namely a Ring Oscillator PUF. Several major quality metrics have been used to analyze the evolution of the PUF response with the total ionizing dose. Experimental results demonstrate that total ionizing dose has a perceptible effect on the quality of the PUF response, but it could still be used for space applications by making some appropriate corrections.

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Transistor Width Effect on the Power Supply Voltage Dependence of α-SER in CMOS 6T SRAM

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2020.2983586 ◽

2020 ◽

Vol 67 (5) ◽

pp. 811-817

Author(s):

G. Torrens ◽

A. Alheyasat ◽

B. Alorda ◽

S. Barcelo ◽

J. Segura ◽

...

Keyword(s):

Power Supply ◽

Voltage Dependence ◽

Supply Voltage ◽

Power Supply Voltage ◽

Width Effect

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A current-mode tunable low-supply-voltage ring oscillator

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.20470 ◽

2010 ◽

Vol 20 (6) ◽

pp. 637-641

Author(s):

Minglin Ma ◽

Chunhua Wang

Keyword(s):

Supply Voltage ◽

Current Mode ◽

Ring Oscillator ◽

Low Supply Voltage ◽

A Current

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High-Performance Low Voltage Organic Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-870-h1.4 ◽

2005 ◽

Vol 870 ◽

Cited By ~ 5

Author(s):

Stijn De Vusser ◽

Soeren Steudel ◽

Kris Myny ◽

Jan Genoe ◽

Paul Heremans

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Low Voltage ◽

Supply Voltage ◽

Organic Thin Film Transistors ◽

Ring Oscillator ◽

Ring Oscillators ◽

Organic Thin Film ◽

Supply Voltages

AbstractIn this work, we report on high-performance low voltage pentacene Organic Thin-Film Transistors (OTFT's) and circuits. Inverters and ring oscillators have been designed and fabricated. At 15 V supply voltage, we have observed invertors showing a voltage gain of 9 and an output swing of more than 13 V. As for the ring oscillators, oscillations started at supply voltages as low as 8.5 V. At a supply voltage of only 15 V, a stage delay time of 3.3 νs is calculated from experimental results.We believe that these results show for the first time a high speed ring oscillator at relatively low supply voltages. The required supply voltages can be obtained by rectification using an organic (pentacene) diode. These results may have an important impact on the realization of RF-ID tags: by integrating our circuits with an organic diode, the fabrication of organic RF-ID tags comes closer.

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