A Smart-Power Synchronous Rectifier by CMOS Process

2010 ◽  
Vol 25 (9) ◽  
pp. 2469-2477 ◽  
Author(s):  
Chow Yee Lim ◽  
Yung C. Liang ◽  
Ganesh S. Samudra ◽  
N. Balasubramanian
2019 ◽  
Vol 29 (08) ◽  
pp. 2020004
Author(s):  
Lianxi Liu ◽  
Yu Shang ◽  
Jiangwei Cheng ◽  
Zhangming Zhu

A miniature and high-efficiency interface circuit based on parallel synchronous switch harvesting on capacitors (P-SSHC) for piezoelectric energy harvesting (PEH) is proposed in this paper. This interface circuit consists of a two-stage synchronous rectifier and the P-SSHC circuit. The two-stage synchronous rectifier, composed of a negative voltage converter (NVC) and an active diode (AD), achieves higher efficiency compared with the full-bridge rectifier (FBR). In addition, the two-stage synchronous rectifier detects the zero-crossing moment of the input current; therefore, an extra current zero-crossing detection circuit is eliminated, which simplifies the structure of the interface circuit, reduces power consumption and improves peak converting efficiency. The P-SSHC circuit aims to improve the power extraction capability of the rectifier. The P-SSHC achieves considerable voltage flipping efficiency with very small volume compared to the parallel synchronized switch harvesting on inductor (P-SSHI), which is more suitable for volume sensitive applications. The proposed interface circuit is designed in SMIC 0.35[Formula: see text][Formula: see text]m CMOS process. Simulation results show that it achieves a [Formula: see text] output power improvement compared with FBR for the case of a 3.4[Formula: see text]V open-circuit voltage, the voltage flipping efficiency is as high as 83.6% and the peak power converting efficiency is up to 91.5%. The overall volume of the capacitors used in this paper is only 0.6[Formula: see text]mm3, which is much smaller than the inductor used by conventional P-SSHI interface circuit.


1999 ◽  
Vol 14 (2) ◽  
pp. 308-315 ◽  
Author(s):  
Honglin Pan ◽  
Y.C. Liang ◽  
R. Oruganti

2019 ◽  
pp. 123-128 ◽  
Author(s):  
Maksim V. Demchenko ◽  
Rostislav O. Ruchkin ◽  
Eugenia P. Simaeva

The article substantiates the expediency of improving the legal support for the introduction and use of energy-efficient lighting equipment, as well as smart networks (Smart Grid), taking into account the ongoing digitalization of the Russian economy and electric power industry. The goal of scientific research is formulated, which is to develop practical recommendations on optimization of the public relations legal regulation in the digital power engineering sector. The research methodology is represented by the interaction of the legal and sociological aspects of the scientific methods system. The current regulatory and legal basis for the transformation of digital electricity relations has been determined. The need to modernize the system of the new technologies introduction legal regulation for generation, storage, transmission of energy, intelligent networks, including a riskbased management model, is established. A set of standardsetting measures was proposed to transform the legal regulation of public relations in the field of energyefficient lighting equipment with the aim of creating and effectively operating a single digital environment, both at the Federal and regional levels. A priority is set for the development of “smart” power grids and highly efficient power equipment in the constituent entities of the Russian Federation through a set of legal, economic (financial), edu cational measures.


2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.


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