Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Platinum Ions for High Temperature Hydrogen Sensing Applications

2006 ◽  
Vol 929 ◽  
Author(s):  
Claudiu Muntele ◽  
Satilmis Budak ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent depth profile modifications of tungsten electrical contacts deposited on silicon carbide substrates.

Wide Bandgap Semiconductor Nanowires for Sensing Applications

2019 ◽  
Vol 6 (2) ◽  
pp. 115-126
Author(s):  
Steve Pearton ◽  
David Norton ◽  
Fan Ren ◽  
Li-Chia Tien ◽  
Byoung Sam Kang ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Sensing Applications

Optical and Electrical Characterizations of Nanoscale Robust 3C-SiC Membrane for UV Sensing Applications

2018 ◽  
Vol 775 ◽  
pp. 278-282
Author(s):  
A.R.M. Foisal ◽  
T. Dinh ◽  
A. Iacopi ◽  
L. Hold ◽  
E.W. Streed ◽  
...  
Keyword(s):  
Uv Light ◽  
Optical Characterization ◽  
Considerable Change ◽  
Electrical Contacts ◽  
Si Substrate ◽  
Uv Illumination ◽  
Sensing Applications ◽  
Transmission Measurements ◽  
Electrical Characterizations

This paper presents the fabrication and optical characterization of an ultrathin 3C-SiC membrane for UV light detection. SiC nanoscale film was grown on Si substrate and subsequently released to form a robust membrane with a high aspect ratio of about 5000. Transmission measurements were performed to determine the thickness of the film with a high accuracy of 98%. We also employed a simple and highly effective direct wirebonding technique to form electrical contacts to the SiC membrane. The considerable change in the photocurrent of the SiC membrane was observed under UV illumination, indicating the potential of using 3C-SiC membranes for UV detection.

scholarly journals Comparative Study of Growth Morphologies of Ga2O3 Nanowires on Different Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1920
Author(s):  
Badriyah Alhalaili ◽  
Ruxandra Vidu ◽  
Howard Mao ◽  
M. Saif Islam
Keyword(s):  
Gallium Oxide ◽  
Catalyst Layer ◽  
Wide Bandgap ◽  
Nanowire Growth ◽  
Si Substrate ◽  
Wide Bandgap Semiconductor ◽  
Si Substrates ◽  
Silver Catalysts ◽  
Elemental Characterization

Gallium oxide (Ga2O3) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga2O3 nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga2O3 nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO2 on n-Si, 250 nm Si3N4 on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga2O3 nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga2O3 nanowire growth directly on the surfaces of various types of substrates using silver catalysts.

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

scholarly journals Kev Ion Beam Induced Surface Modification of Sic Hydrogen Sensor

1999 ◽  
Vol 585 ◽  
Author(s):  
C. I. Muntele ◽  
D. Ila ◽  
E. K. Williams ◽  
D. B. Poker ◽  
D. K. Hensley
Keyword(s):  
Silicon Carbide ◽  
Current Flow ◽  
Chemical Potential ◽  
Ion Beam ◽  
Hydrogen Sensor ◽  
Wide Bandgap ◽  
Surface Chemical ◽  
Detectable Change ◽  
Wide Bandgap Semiconductor ◽  
Palladium Coating

AbstractSilicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type SiC samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included below. The exposure to hydrogen of this kind of sensor while monitoring the current flow with respect to time, has revealed a completely different behavior than the samples that have Pd deposited as a surface layer.

Silicon Carbide And Gallium Nitride Rf Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
C. E. Weitzel ◽  
K. E. Moore
Keyword(s):  
Silicon Carbide ◽  
Gallium Nitride ◽  
Output Power ◽  
Wide Bandgap ◽  
Rf Power ◽  
Power Performance ◽  
Power Devices ◽  
Power Module ◽  
Wide Bandgap Semiconductor ◽  
Power Densities

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.

Hydrogen in the Wide Bandgap Semiconductor Silicon Carbide

2004 ◽  
pp. 99 ◽  
Author(s):  
M. S. Janson ◽  
M. K. Linnarsson ◽  
A. Hall�n ◽  
B. G. Svensson ◽  
N. Achtziger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Silicon

Fabrication and characterization of conductive poly(dimethylsiloxane)-carbon nanotube nanocomposites for potential microsensor applications

Sensor Review ◽  
2019 ◽  
Vol 39 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Shiva Akhtarian ◽  
Hadi Veladi ◽  
Sajedeh Mohammadi Aref
Keyword(s):  
Temperature Dependent ◽  
High Quality ◽  
Content Type ◽  
Sensing Applications ◽  
Pdms Elastomer ◽  
Potential Possibility ◽  
Reproducible Method ◽  
Temperature And Pressure ◽  
The Impact

PurposeThe purpose of the study is to explore the potential possibility of using the conductive and piezoresistive nanocomposites that consist of insulating poly(dimethylsiloxane), a very popular silicone polymer, and the amazing properties of carbon nanotubes (CNT) in sensing applications. This nanocomposite is prepared by an optimized process to achieve a high-quality nanocomposite with uniform properties.Design/methodology/approachThe optimized process achieved in this study to provide PDMS/CNT nanocomposite includes the appropriate use of ultrasonic bath, magnetic stirrer, molding and curing in certain circumstances that results in obtaining high-quality nanocomposite with uniform properties. Experiments to characterize the influence of some factors such as pressure, temperature and the impact of CNT’s concentration on the electrical properties of the prepared nanocomposite have been designed and carried out.FindingsThe obtained preparing method of this nanocomposite is found to have better homogeneity in comparison to other methods for CNT/PDMS nanocomposite. This nanocomposite has both desirable properties of the PDMS elastomer and the additional conductive CNT, and it can be used to create all-polymer systems. Furthermore, the conductivity values of these nanocomposites can be changed by varying some factors such as temperature and pressure, so that those can be used in temperature- and pressure-sensoring applications.Originality/valueIn the present research, a convenient, inexpensive and reproducible method for preparing CNT/PDMS nanocomposite was investigated. These nanocomposites with the unique properties of both PDMS elastomer and CNTs and also with high electrical conductivity, piezoresistive properties and temperature dependent resistivity can be used in different sensoring applications.

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