scholarly journals Micro-Energy Harvesting System Including a PMU and a Solar Cell on the Same Substrate With Cold Startup From 2.38 nW and Input Power Range up to 10 $\mu$W Using Continuous MPPT

2019 ◽  
Vol 34 (6) ◽  
pp. 5105-5116 ◽  
Author(s):  
Esteban Ferro ◽  
Victor Manuel Brea ◽  
Paula Lopez ◽  
Diego Cabello
2016 ◽  
Vol 3 (1) ◽  
pp. 34-42 ◽  
Author(s):  
Tiago Moura ◽  
Nuno Borges de Carvalho ◽  
Pedro Pinho

In this work, a high-efficiency radio-frequency energy-harvesting system that takes use of the Portuguese Digital Television signal (750–758 MHz) to obtain DC power is proposed. To be useful, it is optimized to operate at low-power conditions. For the rectifier, three different solutions are presented: a single-series diode, a single-shunt diode, and a voltage-doubler configuration. The efficiency is similar for the three rectifiers – about 54% with a sine-wave excitation and −10.5 dBm of input power. Field measurements with the voltage-doubler have shown 63% efficiency for the same input power.


2021 ◽  
Vol 20 ◽  
pp. 244-248
Author(s):  
Chinmoy Bharali ◽  
Manash Pratim Sarma

A high frequency rectifier is the core of a RF energy harvesting system. It should offer a very good efficiency at low input power levels and to obtain that compensation of threshold voltage is a very important aspect. A threshold compensation scheme for MOSFETS for RF rectifier applicable in RF energy harvesting system is presented in this paper. The switching of the MOSFET is improved with overall enhancement of output rise time of the system. The design emphasis is to have a simplified circuit without the requirement of any external source so as to achieve self-sustainability in the true sense. The rectifier circuit is derived from the basic Dickson charge pump model and is evaluated using 45nm CMOS process. The design has utilized Metal Oxide Semiconductor Field Effect Transistor instead of basic diodes which ensures low power along with fabrication feasibility. The maximum measured PCE of the design is obtained to be 33% at 4dBm input power level at 500Mhz frequency with 1 Kilo Ohm load resistance. The output transient response rise time has been measured to be 85ns at 500MHz and 50.10ns at 1Ghz.


Nano Energy ◽  
2020 ◽  
Vol 74 ◽  
pp. 104839
Author(s):  
Karim Rawy ◽  
Ruchi Sharma ◽  
Hong-Joon Yoon ◽  
Usman Khan ◽  
Sang-Woo Kim ◽  
...  

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