Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices

2021 ◽  
Vol 36 (3) ◽  
pp. 2564-2573
Author(s):  
Erping Deng ◽  
Ludger Borucki ◽  
Josef Lutz
Keyword(s):  
Delay Time ◽  
Junction Temperature ◽  
Temperature Offset

Operating Temperature Analysis of LED with Cylindrical Cu Slug

2014 ◽  
Vol 487 ◽  
pp. 145-148 ◽  
Author(s):  
Rajendaran Vairavan ◽  
Zaliman Sauli ◽  
Vithyacharan Retnasamy
Keyword(s):  
Natural Convection ◽  
Operating Temperature ◽  
Simulation Method ◽  
Input Power ◽  
Junction Temperature ◽  
Temperature Analysis ◽  
Light Emitting ◽  
New Era ◽  
Lighting Systems

High power light emitting diodes is the new era of lighting due to momentous supremacy in terms of lighting efficacy over traditional lighting systems. The reliability of LED is dependent on its junction temperature. This study confers on the thermal and stress characterization of LED chip with copper cylindrical heat slug through simulation method. The simulation characterization was carried out with Ansys version 11 at ambient temperature of 25°C under natural convection condition. The LED package was powered with input powers of 0.1 W, 0.5 W and 1W .Results indicated that input power influences the junction temperature and stress of LED chip.

scholarly journals In-Place Characterization of On-State Voltage for SiC MOSFETs: Controlled Shoot-Through vs. Film Heater

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2745
Author(s):  
Alessandro Soldati ◽  
Matteo Dalboni ◽  
Roberto Menozzi ◽  
Carlo Concari
Keyword(s):  
Junction Temperature ◽  
Controlled Environment ◽  
Temperature Sensitive ◽  
Polyimide Films ◽  
Temperature Estimation ◽  
Electric Parameter ◽  
Conventional Procedure ◽  
Thermal Chamber ◽  
Characterization Procedure

The on-state voltage of MOSFETs is a convenient and powerful temperature-sensitive electric parameter (TSEP) to determine the junction temperature, thus enabling device monitoring, protection, diagnostics and prognostics. The main hurdle in the use of the on-state voltage as a TSEP is the per-device characterization procedure, to be carried out in a controlled environment, with high costs. In this paper, we compare two novel techniques for MOSFET junction temperature estimation: controlled shoot-through and direct heating by resistive heaters embedded in two Kapton (polyimide) films. Both allow in-place characterization of the TSEP curve with the device mounted in its final circuit and assembly, including the working heat sink. The two methods are also validated against the conventional procedure in a thermal chamber.

Characterization of Junction Temperature of GaN Blue LED with Optimum Spectral Bandwidth

2015 ◽  
Vol 35 (1) ◽  
pp. 0130002 ◽  
Author(s):  
饶丰 Rao Feng ◽  
朱锡芳 Zhu Xifang ◽  
徐安成 Xu Ancheng ◽  
褚静 Chu Jing ◽  
张燕 Zhang Yan
Keyword(s):  
Junction Temperature ◽  
Spectral Bandwidth ◽  
Blue Led

scholarly journals Calibration and Characterization of a Reduced Form-Factor High Accuracy Three-Axis Teslameter

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 151
Author(s):  
Johann Cassar ◽  
Andrew Sammut ◽  
Nicholas Sammut ◽  
Marco Calvi ◽  
Zarko Mitrovic ◽  
...  
Keyword(s):  
Form Factor ◽  
Measurement Techniques ◽  
Calibration Procedure ◽  
Reduced Form ◽  
Hall Probe ◽  
X Ray ◽  
Temperature Offset ◽  
Paul Scherrer ◽  
Reference Fields

A new reduced form-factor three axes digital teslameter, based on the spinning current technique, has been developed. This instrument will be used to characterize the SwissFEL insertion devices at the Paul Scherrer Institute (PSI) for the ATHOS soft X-ray beamline. A detailed and standardized calibration procedure is critical to optimize the performance of this precision instrument. This paper presents the measurement techniques used for the corrective improvements implemented through non-linearity, temperature offset, temperature sensitivity compensation of the Hall probe and electronics temperature compensation. A detailed quantitative analysis of the reduction in errors on the application of each step of the calibration is presented. The percentage peak error reduction attained through calibration of the instrument for reference fields in the range of ±2 T is registered to drop from 1.94% down to 0.02%.

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