Bibilography and Abstracts on Electrical Contacts,Circuit Breakers,and Arc Phenomena,1965-1969

Thermal plasma of electric arc is widely used in various technological applications: welding, cutting, lamps, spraying, protection of electrical installations, etc. Process efficiency is defined by different parameters that determine arc operation and influence the energy transfer within the medium. All energy exchanges depend on the medium, which is modified by the presence of the arc and more particularly by the appearance of new species from contact erosion. Sintered Cu-Cr composites are widely used as electrical contacts for vacuum circuit breakers. These materials take advantage of the high thermal and electrical conductivity of Cu and of the refractory and oxygen getter properties of reinforcing Cr particles. The aim of this paper is to give results of the calculation of the equilibrium composition of argon and air plasma with various admixtures of Cu and Cr.

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Dynamics of arc phenomena at closure of electrical contacts in vacuum circuit breakers

XXIst International Symposium on Discharges and Electrical Insulation in Vacuum, 2004. Proceedings. ISDEIV. ◽

10.1109/deiv.2004.1422606 ◽

2005 ◽

Author(s):

S.N. Kharin ◽

H. Nouri ◽

D. Amft

Keyword(s):

Electrical Contacts ◽

Circuit Breakers

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Electrical and Morphological Investigations of Electrical Contacts used in Low-Voltage Circuit-Breakers

2020 IEEE 66th Holm Conference on Electrical Contacts and Intensive Course (HLM) ◽

10.1109/hlm49214.2020.9307843 ◽

2020 ◽

Author(s):

Marion Kubler-Riedinger ◽

Jean-Marc Bauchire ◽

Dunpin Hong ◽

Gauthier Deplaude ◽

Patrice Joyeux

Keyword(s):

Low Voltage ◽

Electrical Contacts ◽

Circuit Breakers ◽

Morphological Investigations

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TEM characterization of Au/Polysilicon interactions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176381 ◽

1990 ◽

Vol 48 (4) ◽

pp. 650-651

Author(s):

N. David Theodore ◽

Leslie H. Allen ◽

C. Barry Carter ◽

James W. Mayer

Keyword(s):

Solid Phase ◽

Single Crystal Silicon ◽

Chemical Vapor ◽

Electrical Contacts ◽

Silicon Substrates ◽

Crystal Silicon ◽

Transmission Electron ◽

Polysilicon Films ◽

The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

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