scholarly journals A Low-Loss Integrated Circuit Breaker for HVDC applications

2021 ◽  
pp. 1-1
Author(s):  
Sheng Wang ◽  
Wenlong Ming ◽  
Carlos Ernesto Ugalde Loo ◽  
Jun Liang
Keyword(s):  
Integrated Circuit ◽  
Circuit Breaker ◽  
Low Loss

Inkjet and 3D Printing Technology for Fundamental Millimeter-Wave Wireless Packaging

2018 ◽  
Vol 15 (3) ◽  
pp. 101-106
Author(s):  
Bijan K. Tehrani ◽  
Ryan A. Bahr ◽  
Manos M. Tentzeris
Keyword(s):  
3D Printing ◽  
Millimeter Wave ◽  
Integrated Circuit ◽  
Coplanar Waveguide ◽  
Frequency Selective Surface ◽  
60 Ghz ◽  
Low Loss ◽  
Printing Technology ◽  
3D Printing Technology ◽  
Application Specific

Abstract This article outlines the design, processing, and implementation of inkjet and 3D printing technologies for the development of fully printed, highly integrated millimeter-wave (mm-wave) wireless packages. The materials, tools, and processes of each technology are outlined and justified for their respective purposes. Inkjet-printed 3D interconnects directly interfacing a packaging substrate with an integrated circuit (IC) die are presented using printed dielectric ramps and coplanar waveguide transmission lines exhibiting low loss (.6–.8 dB/mm at 40 GHz). Stereolithography 3D printing is presented for the encapsulation of IC dice, enabling the application-specific integration of on-package structures, including dielectric lenses and frequency selective surface–based wireless filters. Finally, inkjet and 3D printing technology are combined to present sloped mm-wave interconnects through an encapsulant, or through mold vias, achieving a slope of up to 65° and low loss (.5–.6 dB/mm at 60 GHz). The combination of these additive techniques is highlighted for the development of scalable, application-specific wireless packages.

RF-Powered Stent With Integrated Circuit Breaker for Safeguarded Wireless Hyperthermia Treatment

2015 ◽  
Vol 24 (5) ◽  
pp. 1293-1302 ◽  
Author(s):  
Yi Luo ◽  
Xing Chen ◽  
Masoud Dahmardeh ◽  
Kenichi Takahata
Keyword(s):  
Integrated Circuit ◽  
Circuit Breaker ◽  
Hyperthermia Treatment

A Buck Converter with Integrated Circuit Breaker

2018 ◽  
Author(s):  
Jeffrey Yong Kwen Chong ◽  
Daniel J. Ryan ◽  
Hugh D. Torresan ◽  
Behrooz Bahrani
Keyword(s):  
Integrated Circuit ◽  
Circuit Breaker ◽  
Buck Converter

Novel Doubly Nano-Scale Perturbative Resonance Control of a Free-Suspending Photonic Crystal Structure

2011 ◽  
Vol 83 ◽  
pp. 147-150
Author(s):  
Xiong Yeu Chew ◽  
Guang Ya Zhou ◽  
Fook Siong Chau
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuit ◽  
Near Field ◽  
Low Loss ◽  
Energy Distributions ◽  
Resonance Control ◽  
Novel Devices ◽  
The Impact ◽  
Mode Energy ◽  
Chip Chip

The impact of developing nanophotonic components have proven to be a promising research on the future optical integrated circuit complementing the current scaling of semiconductors for faster board-board, chip-chip interconnect speeds. Essentially photonic crystals (PhC) symbolize an emerging class of periodic nanomaterials that offers flexibilities in achieving novel devices. Based on the investigations of the high-Q resonance mode energy distributions, we optimized the nano­scale tip for optimal perturbative effect with low loss resonance control in the optical near field regime. In this study to achieve larger spectral resonance, we proposed using a novel doubly nano­scale perturbative tip to achieve optimal accurate photonic crystal resonance control. Such method may be driven by a nano-electromechanical (NEMS) system that may be fabricated with monolithic approaches.

Investigation of Wafer Level Packaging schemes for 3D RF interposer multi-chip module

2017 ◽  
Vol 2017 (1) ◽  
pp. 000258-000262
Author(s):  
Bart Vereecke ◽  
Philippe Soussan ◽  
Jian Zhu
Keyword(s):  
Integrated Circuit ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Process Technology ◽  
Low Loss ◽  
Yield Optimization ◽  
Active Devices ◽  
Wafer Level Packaging ◽  
Rf Performance ◽  
Rf Loss

Abstract Very small RF modules can be realized through heterogenous integration of GaAs MMIC (monolithic microwave integrated circuit) onto a low loss Si sub-mount, with high density routing lines realized by advanced patterning. In this paper we investigate how to integrate MMIC active devices on GaAs with the RF passives produced on an interposer, using Si wafer process technology. High resistive Silicon substrates are required to minimize RF losses. The interposer is thinned below 100 μm to reveal Cu TSVs from the back of the interposer, while the front side is covered entirely with a silicon capping wafer for shielding the device. We compare different wafer level packaging approaches for producing the low RF-loss interposers, and populating them using die-to-die (D2D) or die-to-wafer (D2W) bonding of the MMIC components, followed by wafer level encapsulation. Two D2W approaches are compared, in the first approach the D2W mounting and the encapsulation happens before the Si interposer is thinned for TSV reveal. To avoid damage during thinning of the wafer, thicker substrates with deeper TSV of 150 μm or more are required. In a second approach, the thinning of the interposer is done prior to the mounting. Initial electrical data showed that the approach yielded proper RF performance, but further yield optimization is required.

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