scholarly journals Novel low loss wide-band multi-port integrated circuit technology for RF/microwave applications

2002 ◽  
Author(s):  
R.N. Simons ◽  
L.K. Goverdhanam ◽  
L.P.B. Katehi
Keyword(s):  
Integrated Circuit ◽  
Wide Band ◽  
Low Loss ◽  
Microwave Applications ◽  
Circuit Technology ◽  
Rf Microwave

D-band Waveguide Transition Based on Linearly Tapered Slot Antenna

2017 ◽  
Vol 2017 (NOR) ◽  
pp. 1-4
Author(s):  
Ahmed Hassona ◽  
Zhongxia Simon He ◽  
Vessen Vassilev ◽  
Herbert Zirath
Keyword(s):  
Integrated Circuit ◽  
Return Loss ◽  
Wide Band ◽  
Slot Antenna ◽  
Microwave Integrated Circuit ◽  
Low Loss ◽  
Monolithic Microwave Integrated Circuit ◽  
Average Return ◽  
Waveguide Transition ◽  
On Chip

Abstract In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110–170 GHz. The average return loss of the transition is −15 dB and the minimum is −9 dB. The structure occupies an area of 0.82×0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.

Recent Advances in Microwave Applications of Thin Ferroelectric Films at the NASA Glenn Research Center

2004 ◽  
Vol 833 ◽  
Author(s):  
Robert R. Romanofsky ◽  
Felix A. Miranda ◽  
Fred W. Van Keuls ◽  
Matthew D. Valerio
Keyword(s):  
Wide Band ◽  
Phase Shifters ◽  
Device Performance ◽  
Proton Radiation ◽  
Low Loss ◽  
Hybrid Device ◽  
Preliminary Results ◽  
X Band ◽  
Recent Developments ◽  
Microwave Applications

ABSTRACTWe report on recent developments in microwave applications and understanding of thin Ba50Sr50TiO3films. Most of our recent efforts have focused on developing low loss, wide band phase shifters from X-band (8.4 GHz) to Ka-Band (26.5 GHz) for scanning reflectarray antennas. Attempts to reduce tanδ by Mn-doping Ba50Sr50TiO3films are briefly discussed. We have demonstrated a hybrid device at X-band that produces in excess of 300 degrees of phase shift with about 3.5 dB insertion loss and greater that 10% bandwidth. Preliminary results are presented here. The effects of mild (600 rad Si) proton radiation on device performance will also be discussed. Preliminary results on optical phase shifters will be included.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals A Low-Loss Integrated Circuit Breaker for HVDC applications

2021 ◽  
pp. 1-1
Author(s):  
Sheng Wang ◽  
Wenlong Ming ◽  
Carlos Ernesto Ugalde Loo ◽  
Jun Liang
Keyword(s):  
Integrated Circuit ◽  
Circuit Breaker ◽  
Low Loss

PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS

1991 ◽  
Vol 02 (03) ◽  
pp. 147-162 ◽  
Author(s):  
ROBERT G. SWARTZ
Keyword(s):  
Gallium Arsenide ◽  
Optical Communication ◽  
Optical Communications ◽  
Integrated Circuit ◽  
High Performance ◽  
Compound Semiconductor ◽  
Performance Curve ◽  
Semiconductor Technology ◽  
Market Trends ◽  
Circuit Technology

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.

scholarly journals Design and Development of a 3dB Quadrature Patch Hybrid Coupler

2018 ◽  
Vol 7 (2.6) ◽  
pp. 217
Author(s):  
B Sekharbabu ◽  
K Narsimha Reddy ◽  
S Sreenu
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Return Loss ◽  
Coupling Factor ◽  
Power Combiners ◽  
Measurement Results ◽  
Structure Simulation ◽  
Hybrid Coupler ◽  
Port Device ◽  
Circuit Technology

In this paper a -3 dB, 90-degreephase shift RF quadrature patch hybrid coupler is designed to operate at 2.4GHz. Hybrid coupler is a four-port device, that’s accustomed split a signaling with a resultant 90degrees’ section shift between output signals whereas maintaining high isolation between the output ports. The RF quadrature patch hybrid coupler is used in various radio frequency applications including mixers, power combiners, dividers, modulators and amplifiers. The desired hybrid coupler is designed using FR-4 substrate with 1.6mm height in High Frequency Structure Simulation (HFSS) and the same is fabricated and tested. The designed Hybrid coupler is examined in terms of parameters like insertion Loss, coupling factor and return Loss. The simulation and measurement results are compared. Major advantages of the RF quadrature patch hybrid couplers are that they are compatible with integrated circuit technology.

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