Direct characterization of ZnO films in composite resonators by the resonance spectrum method

2003 ◽  
Author(s):  
Y. Zhang ◽  
Z. Wang ◽  
J.D.N. Cheeke ◽  
F.S. Hickernell
Keyword(s):  
Resonance Spectrum ◽  
Zno Films ◽  
Spectrum Method

Characterization of ZnO Films Grown by Chemical Vapor Deposition as Active Layer in Pseudo-MOSFET

2021 ◽  
Author(s):  
A. Ramos-Carrazco ◽  
J. A. Gallardo-Cubedo ◽  
A. Vera-Marquina ◽  
A. L. Leal-Cruz ◽  
J. R. Noriega ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

Monothiocarbamate complexes of divalent nickel, palladium, and platinum

1973 ◽  
Vol 26 (8) ◽  
pp. 1645 ◽  
Author(s):  
EM Krankovits ◽  
RJ Magee ◽  
MJ O'Conner
Keyword(s):  
Proton Magnetic Resonance ◽  
Resonance Spectrum ◽  
Proton Magnetic Resonance Spectrum ◽  
Spectral Measurements ◽  
Infrared Measurements ◽  
Divalent Nickel ◽  
Infrared Spectral ◽  
Definite Structure ◽  
First Time

The preparation of a number of polymeric, octahedral bis(N- alkylmonothiocarbamato)nickel(II) complexes and some of their base adducts is described. ��� The preparation and characterization of some bis(phosphine)bis(N- alkylmono-thiocarbamato)palladium(II) compounds are also described for the first time. The butyl compound is monomeric in chloroform and infrared spectral measurements of all compounds indicate that the monothiocarbamate ligands are bonded to palladium through the sulphur atoms only. The proton magnetic resonance spectrum of the dimethylphenylphosphine complex shows clearly that the phosphine groups are trans in the complexes. ��� Simple bis(monothiocarbamato)-palladium(II) or -platinum(II) have not been isolated but pyrrolidinium tetra(N- pyrrolidylmonothiocarbamato)-palladium(II) or -platinum(II) compounds are formed. Infrared measurements indicate that the mono-thiocarbamate ligands are bonded to the metal through both oxygen and sulphur atoms but no definite structure can be proposed for these compounds at present.

Growth and Characterization of Urea Doped p-Type ZnO Thin Film Grown by Pulsed Laser Deposition

2009 ◽  
Vol 67 ◽  
pp. 127-130 ◽  
Author(s):  
Majumdar Sayanee ◽  
Banerji Pallab
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Laser Deposition ◽  
Zno Films ◽  
Group V ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
P Type

In the present study we have used urea as the source for doping nitrogen in ZnO since the most successful acceptor type dopant is the group V element like nitrogen. The nitrogen doped ZnO films have been deposited on glass substrates using Pulsed Laser Deposition technique using 248 nm KrF laser at energy 300 mJ by varying the number of laser pulses with a repetition rate of 10 pulse/sec in vacuum (10-6 mbar) at a constant temperature of 300 °C. The XRD pattern confirms the formation of wurtzite structure of ZnO, which is polycrystalline in nature. We have also performed UV absorption spectroscopy and the band gap is found to be 3.4 eV. Resistivity of the film increases with the increase of thickness for the undoped ZnO samples where the carrier concentrations are found to be of the order of 1017 cm-3. The mobility of the as-grown film is found to be 24.9 cm2/V-s. After doping with nitrogen the carrier concentration drops to the order of 1015 cm-3 and the mobility becomes 1.5 cm2/V-s. The mobility slightly varies with thickness. The resistivity increases to 1.3 KΩ-cm and the film shows p-type behavior. The results are explained on the basis of the available theory.

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