Temperature coefficients of SAW velocity for AlN thin film sputtered on ST-X quartz

Author(s):  
Kuo-Sheng Kao ◽  
Ying-Chung Chen ◽  
Yi-Hung Lee ◽  
Chien-Chuan Cheng
2019 ◽  
Vol 7 ◽  
pp. 140-149 ◽  
Author(s):  
Shi-Chang Tseng ◽  
Tong-Yu Wu ◽  
Jung-Chuan Chou ◽  
Yi-Hung Liao ◽  
Chih-Hsien Lai ◽  
...  

Author(s):  
A. Tag ◽  
R. Weigel ◽  
A. Hagelauer ◽  
B. Bader ◽  
M. Pitschi ◽  
...  

2005 ◽  
Vol 13 (2) ◽  
pp. 149-156 ◽  
Author(s):  
Simon H. Liu ◽  
Edward J. Simburger ◽  
James Matsumoto ◽  
Alexander Garcia ◽  
Jasen Ross ◽  
...  

2022 ◽  
pp. 1-19
Author(s):  
Yatindra Kumar Ramgolam ◽  
Heman Shamachurn ◽  
Jonathan Yannick Coret

Abstract The photovoltaics (PV) industry is booming at an impressive rate. Knowledge of the outdoor perfor-mance of different PV technologies under different climatic conditions is becoming increasingly im-portant for all stakeholders. The aim of this research was to perform the outdoor characterisation of three PV technologies in a tropical climate and evaluate their performances with the aid of a set of key performance indicators. An innovative energy autonomous outdoor test facility has been used to measure the weather conditions and the IV curves of mono-Si, poly-Si and CIGS PV modules. Each IV curve was sampled within less than a second, for every 10 minutes, between sunrise and sunset for a whole year, representing a data set of around 28,000 IV curves of 240 points each. The variations of current, voltage and power were thoroughly studied for changes in temperature and irradiance. This paper reports the variations of temperature coefficients of current, voltage and power with the inten-sity of light. While PV module documentation only present the temperature coefficients of the short circuit current and open circuit voltage at Standard Test Conditions, this paper additionally provides highly valuable information to PV system designers on the variation of these coefficients in the field. The research is also the first to report the variations of the fill factor with temperature and irradi-ance. In general, the wafer technologies were found to have a better performance than the thin film technology. Moreover, the open-circuit temperature coefficient was found to improve for higher irra-diances only for the wafer technologies, while that for the thin-film technology experienced a degrada-tion. The temperature coefficient of current for the mono-Si module was found to be positive at low irradiance levels, but negative at higher irradiance levels.


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