P-type surface charge transfer doping of black phosphorus field-effect transistors

Author(s):  
Yuchen Du ◽  
Lingming Yang ◽  
Hong Zhou ◽  
Peide D. Ye
2020 ◽  
Vol 8 (19) ◽  
pp. 6595-6604
Author(s):  
Boran Xing ◽  
Ying Yu ◽  
Jiadong Yao ◽  
Xinyue Niu ◽  
Xiaoyuan Yan ◽  
...  

A metal oxide/h-BN/BP structure was built to realize electron doping and air stability for BPFETs.


2018 ◽  
Vol 10 (4) ◽  
pp. 4206-4212 ◽  
Author(s):  
Sung-Wook Min ◽  
Minho Yoon ◽  
Sung Jin Yang ◽  
Kyeong Rok Ko ◽  
Seongil Im

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.


2021 ◽  
pp. 2101598
Author(s):  
Jae‐Keun Kim ◽  
Kyungjune Cho ◽  
Juntae Jang ◽  
Kyeong‐Yoon Baek ◽  
Jehyun Kim ◽  
...  

2016 ◽  
Vol 18 (6) ◽  
pp. 4304-4309 ◽  
Author(s):  
Shunfeng Wang ◽  
Weijie Zhao ◽  
Francesco Giustiniano ◽  
Goki Eda

Oxygen and ozone molecules induce p-type doping in WSe2via the charge transfer process, leading to a considerable increase in the hole conductance.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


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