Surface charge transfer doping and effective passivation of black phosphorus field effect transistors

Journal of Materials Chemistry C ◽

10.1039/d0tc00740d ◽

2020 ◽

Vol 8 (19) ◽

pp. 6595-6604

Author(s):

Boran Xing ◽

Ying Yu ◽

Jiadong Yao ◽

Xinyue Niu ◽

Xiaoyuan Yan ◽

...

Keyword(s):

Charge Transfer ◽

Metal Oxide ◽

Surface Charge ◽

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

Electron Doping

A metal oxide/h-BN/BP structure was built to realize electron doping and air stability for BPFETs.

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P-type surface charge transfer doping of black phosphorus field-effect transistors

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2016.7480509 ◽

2016 ◽

Author(s):

Yuchen Du ◽

Lingming Yang ◽

Hong Zhou ◽

Peide D. Ye

Keyword(s):

Charge Transfer ◽

Surface Charge ◽

Field Effect ◽

Field Effect Transistors ◽

Black Phosphorus ◽

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Thickness Trends of Electron and Hole Conduction and Contact Carrier Injection in Surface Charge Transfer Doped 2D Field Effect Transistors

ACS Nano ◽

10.1021/acsnano.0c05572 ◽

2020 ◽

Vol 14 (10) ◽

pp. 13557-13568

Author(s):

Andrew J. Arnold ◽

Daniel S. Schulman ◽

Saptarshi Das

Keyword(s):

Charge Transfer ◽

Surface Charge ◽

Field Effect ◽

Field Effect Transistors ◽

Carrier Injection ◽

Hole Conduction

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Molecular Dopant‐Dependent Charge Transport in Surface‐Charge‐Transfer‐Doped Tungsten Diselenide Field Effect Transistors

Advanced Materials ◽

10.1002/adma.202101598 ◽

2021 ◽

pp. 2101598

Author(s):

Jae‐Keun Kim ◽

Kyungjune Cho ◽

Juntae Jang ◽

Kyeong‐Yoon Baek ◽

Jehyun Kim ◽

...

Keyword(s):

Charge Transfer ◽

Charge Transport ◽

Surface Charge ◽

Field Effect ◽

Field Effect Transistors ◽

Tungsten Diselenide

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c100 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C100 ◽

Author(s):

Yuki Nakano ◽

Toshikazu Mukai ◽

Ryota Nakamura ◽

Takashi Nakamura ◽

Akira Kamisawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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