Direct Channel Length Determination Of Sub-100nm Mos Devices Using Scanning Capacitance Microscopy

Author(s):  
R.N. Kleiman ◽  
M.L. O'Malley ◽  
F.H. Baumann ◽  
J.P. Garno ◽  
W.G. Timp ◽  
...  
2001 ◽  
Vol 24 (2) ◽  
pp. 129-134
Author(s):  
Y. Amhouche ◽  
A. El Abbassi ◽  
K. Raïs ◽  
E. Bendada ◽  
R. Rmaily

A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.


IAWA Journal ◽  
1983 ◽  
Vol 4 (4) ◽  
pp. 245-247 ◽  
Author(s):  
A. P. Wilkins ◽  
R. K. Bamber

A comparison has been made between the method of Ladell, in which tangential longitudinal sections are used for the determination of mean tracheid length and the traditional method using macerated wood. The two methods produced identical results. Ladell's method was quicker, enabled precise location of measured cells and required less sample preparation.


Author(s):  
M.-A. Cantin ◽  
Y. Savaria ◽  
Prodanos ◽  
P. Lavoie

1964 ◽  
Vol 47 (8) ◽  
pp. 920-921 ◽  
Author(s):  
S. Odagiri ◽  
T.A. Nickerson

1986 ◽  
Vol 22 (2) ◽  
pp. 254
Author(s):  
K B Chung ◽  
B Y Ahn ◽  
J K Park ◽  
N J Lee ◽  
W H Suh

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