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Thermal stability and scalability of Zr-aluminate-based high-k gate stacks
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)
◽
10.1109/vlsit.2002.1015448
◽
2003
◽
Cited By ~ 4
Author(s):
P.J. Chen
◽
E. Cartier
◽
R.J. Carter
◽
T. Kauerauf
◽
C. Zhao
◽
...
Keyword(s):
Thermal Stability
◽
Gate Stacks
◽
High K
Download Full-text
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References
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks
2008 IEEE International Integrated Reliability Workshop Final Report
◽
10.1109/irws.2008.4796094
◽
2008
◽
Cited By ~ 7
Author(s):
Tibor Grasser
◽
Ben Kaczer
◽
Thomas Aichinger
◽
Wolfgang Goes
◽
Michael Nelhiebel
Keyword(s):
Driving Force
◽
Negative Bias
◽
Gate Stacks
◽
Negative Bias Temperature Instability
◽
Temperature Instability
◽
Thermally Activated
◽
Bias Temperature Instability
◽
Hole Trapping
◽
High K
◽
Defect Creation
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Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
Journal of Non-Crystalline Solids
◽
10.1016/s0022-3093(02)00964-x
◽
2002
◽
Vol 303
(1)
◽
pp. 54-63
◽
Cited By ~ 54
Author(s):
P.S. Lysaght
◽
P.J. Chen
◽
R. Bergmann
◽
T. Messina
◽
R.W. Murto
◽
...
Keyword(s):
Thermal Stability
◽
Gate Dielectric
◽
Dielectric Materials
◽
High K
◽
Thermal Stability Of
◽
High K Gate Dielectric
Download Full-text
Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks
IEEE Electron Device Letters
◽
10.1109/led.2010.2071851
◽
2010
◽
Author(s):
Won-Ho Choi
◽
Chang-Young Kang
◽
Jung-Woo Oh
◽
Byoung-Hun Lee
◽
Prashant Majhi
◽
...
Keyword(s):
High Performance
◽
Negative Bias
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
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Comparison of semiclassical transport formulations including quantum corrections for advanced devices with High-K gate stacks
2010 14th International Workshop on Computational Electronics
◽
10.1109/iwce.2010.5677952
◽
2010
◽
Author(s):
F. M. Bufler
◽
V. Aubry-Fortuna
◽
A. Bournel
◽
M. Braccioli
◽
P. Dollfus
◽
...
Keyword(s):
Quantum Corrections
◽
Gate Stacks
◽
High K
◽
Semiclassical Transport
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Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition
Applied Physics A
◽
10.1007/s00339-003-2187-4
◽
2005
◽
Vol 80
(2)
◽
pp. 321-324
◽
Cited By ~ 7
Author(s):
J. Zhu
◽
Z.G. Liu
◽
M. Zhu
◽
G.L. Yuan
◽
J.M. Liu
Keyword(s):
Thermal Stability
◽
Electrical Properties
◽
Pulsed Laser Deposition
◽
Gate Dielectric
◽
Pulsed Laser
◽
Laser Deposition
◽
High K
◽
High K Gate Dielectric
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The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks
ECS Transactions
◽
10.1149/1.3122087
◽
2019
◽
Vol 19
(2)
◽
pp. 87-99
◽
Cited By ~ 5
Author(s):
Felice Crupi
◽
Paolo Magnone
◽
Eddy Simoen
◽
Luigi Pantisano
◽
Gino Giusi
◽
...
Keyword(s):
Gate Stacks
◽
High K
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High-k Gate Stacks Influence on Characteristics of Nano-scale MOSFET Structures
Proceedings of the 2nd International Conference on Modelling, Identification and Control
◽
10.2991/mic-15.2015.39
◽
2015
◽
Cited By ~ 2
Author(s):
Konstantin O. Petrosyants
◽
Dmitriy A. Popov
Keyword(s):
Gate Stacks
◽
Nano Scale
◽
High K
Download Full-text
Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
Download Full-text
Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.081303
◽
2012
◽
Vol 51
◽
pp. 081303
◽
Cited By ~ 5
Author(s):
Shinya Hibino
◽
Tomonori Nishimura
◽
Kosuke Nagashio
◽
Koji Kita
◽
Akira Toriumi
Keyword(s):
Layer Formation
◽
Gate Stacks
◽
Dipole Layer
◽
High K
Download Full-text
Systematic study on work-function-shift in metal/Hf-based high-k gate stacks
Applied Physics Letters
◽
10.1063/1.3103314
◽
2009
◽
Vol 94
(12)
◽
pp. 122905
◽
Cited By ~ 8
Author(s):
Yuki Kita
◽
Shinichi Yoshida
◽
Takuji Hosoi
◽
Takayoshi Shimura
◽
Kenji Shiraishi
◽
...
Keyword(s):
Work Function
◽
Systematic Study
◽
Gate Stacks
◽
High K
Download Full-text
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