Further understandings on random telegraph signal noise through comprehensive studies on large time constant variation and its strong correlations to thermal activation energies

2014 ◽  
Author(s):  
Jiezhi Chen ◽  
Yusuke Higashi ◽  
Koichi Kato ◽  
Yuichiro Mitani
Keyword(s):  
Time Constant ◽  
Thermal Activation ◽  
Large Time ◽  
Activation Energies ◽  
Strong Correlations ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Comprehensive Studies

Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy

2000 ◽  
Vol 88 (5) ◽  
pp. 2564-2569 ◽  
Author(s):  
D. J. Kim ◽  
D. Y. Ryu ◽  
N. A. Bojarczuk ◽  
J. Karasinski ◽  
S. Guha ◽  
...  
Keyword(s):  
Hall Effect ◽  
Thermal Activation ◽  
Activation Energies ◽  
Admittance Spectroscopy

Thermal Activation Energies for the Three Inequivalent Lattice Sites for the BSi Acceptor in 6H-SiC

1997 ◽  
Vol 258-263 ◽  
pp. 691-696 ◽  
Author(s):  
A.O. Evwaraye ◽  
S.R. Smith ◽  
W.C. Mitchel ◽  
H. McD. Hobgood ◽  
G. Augustine ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Activation Energies

Restoration of terahertz continuous wave image obtained by continuous scan mode with large time constant

2014 ◽  
Vol 53 (32) ◽  
pp. 7735 ◽  
Author(s):  
Xiao Lou ◽  
Lei Hou ◽  
Gaoyuan Guo ◽  
Wei Shi
Keyword(s):  
Time Constant ◽  
Large Time ◽  
Continuous Wave ◽  
Wave Image

Characterization of Semi-insulating SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Nguyen Tien Son ◽  
Patrick Carlsson ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Vapor Deposition ◽  
Thermal Activation ◽  
Deep Level ◽  
Chemical Vapor ◽  
Activation Energies ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

AbstractElectron paramagnetic resonance was used to study defects in high-purity semi-insulating (HPSI) substrates grown by high-temperature chemical vapor deposition and physical vapor transport. Deep level defects associated to different thermal activation energies of the resistivity ranging from ~0.6 eV to ~1.6 eV in HPSI substrates are identified and their roles in carrier compensation processes are discussed. Based on the results obtained in HPSI materials, we discuss the carrier compensation processes in vanadium-doped SI SiC substrates and different activation energies in the material.

Impact of Channel Doping Concentration on Random Telegraph Signal Noise

2009 ◽  
Author(s):  
K. Abe ◽  
A. Teramoto ◽  
S. Watabe ◽  
T. Fujisawa ◽  
S. Sugawa ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Random Telegraph Signal ◽  
Signal Noise
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