Modulation Strategy Comprising TCM with Frequency Limit and DPWM for Fast Switching GaN-Inverters

2021 ◽  
Author(s):  
Benedikt Kohlhepp ◽  
Thomas Durbaum
Keyword(s):  
Frequency Limit ◽  
Fast Switching

Evaluation of Special Hearing Aids for Deaf Children

1971 ◽  
Vol 36 (4) ◽  
pp. 527-537 ◽  
Author(s):  
Norman P. Erber
Keyword(s):  
Hearing Aids ◽  
High Frequency ◽  
Hearing Aid ◽  
Low Frequency ◽  
Acoustic Stimulation ◽  
Deaf Children ◽  
Frequency Range ◽  
Frequency Limit ◽  
Unpublished Studies ◽  
Published Research

Two types of special hearing aid have been developed recently to improve the reception of speech by profoundly deaf children. In a different way, each special system provides greater low-frequency acoustic stimulation to deaf ears than does a conventional hearing aid. One of the devices extends the low-frequency limit of amplification; the other shifts high-frequency energy to a lower frequency range. In general, previous evaluations of these special hearing aids have obtained inconsistent or inconclusive results. This paper reviews most of the published research on the use of special hearing aids by deaf children, summarizes several unpublished studies, and suggests a set of guidelines for future evaluations of special and conventional amplification systems.

Iron Loss Characteristics of Motors Fed by Fast Switching GaN-FET Inverters

2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  
Iron Loss ◽  
Fast Switching ◽  
Gan Fet

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

Review on Switches for Power Applications: Macro to Micro

2019 ◽  
Vol 12 (3) ◽  
pp. 200-209
Author(s):  
Femi Robert
Keyword(s):  
Leakage Current ◽  
Power Loss ◽  
Low Cost ◽  
Electrical System ◽  
High Isolation ◽  
Fast Switching ◽  
Environmental Friendly ◽  
State Resistance ◽  
Very High ◽  
Bulk Production

Background: Switches are important component in electrical system. The switches needs to have the advantages of low ON-state resistance, very high OFF-state resistance, high isolation, no leakage current, less power loss, fast switching, high linearity, small size, arcless and low cost in bulk production. Also these switches have to be reliable and environmental friendly. Methods: In this paper, macro and microswitches for power applications are extensively reviewed and summarized. Various types of switches such as mechanical, solid-state, hybrid and micromechanical switches have been used for power applications are reviewed. The importance and challenge in achieving arcless switching is presented. Results: The use of micromechanical switches for power applications, actuation techniques, switching modes, reliability and lifetime are also reviewed. The modeling and design challenges are also reviewed. Conclusion: The applications of micromechanical switches shows that the switches can reduce the leakage current in battery operated systems and reduce the size of the system considerably.

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