Fully recessed-gate normally-off AlGaN/GaN high electron mobility transistors with high breakdown electric field*

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ◽

10.1109/wipdaasia.2018.8734585 ◽

2018 ◽

Author(s):

Yunlong He ◽

Qing He ◽

Minhan Mi ◽

Chong Wang ◽

Yue Hao ◽

...

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Breakdown Electric Field ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

High Breakdown Electric Field

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Electrical features in $$\hbox {AlGaN}/\hbox {GaN}$$ AlGaN / GaN high electron mobility transistors with recessed gate and undoped region in the barrier

Pramana ◽

10.1007/s12043-018-1715-x ◽

2019 ◽

Vol 92 (4) ◽

Author(s):

S M Razavi ◽

S H Zahiri ◽

S Karimi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2255 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2255-2258 ◽

Author(s):

Akira Endoh ◽

Yoshimi Yamashita ◽

Keiji Ikeda ◽

Masataka Higashiwaki ◽

Kohki Hikosaka ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Rf Performance ◽

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Improvement of Current Collapse in Deeply Recessed Gate AlGaN/GaN High Electron Mobility Transistors without Field Modulating Structure

10.7567/ssdm.2011.a-1-4 ◽

2011 ◽

Author(s):

A. Imai ◽

K. Yamanaka ◽

Y. Suzuki ◽

T. Nanjo ◽

M. Suita ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse ◽

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Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2016.7998701 ◽

2016 ◽

Author(s):

Huolin Huang ◽

Zhonghao Sun ◽

Zifeng Zhang ◽

Rensheng Shen ◽

Y.C. Liang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

Applied Physics Letters ◽

10.1063/1.4977084 ◽

2017 ◽

Vol 110 (9) ◽

pp. 092101 ◽

Author(s):

Takashi Katsuno ◽

Takaaki Manaka ◽

Narumasa Soejima ◽

Mitsumasa Iwamoto

Keyword(s):

Electric Field ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Electron Mobility ◽

Second Harmonic ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Field Plate ◽

Electron Mobility Transistors

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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3358 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3358-3363

Author(s):

Jong-Won Lim ◽

Ho-Kyun Ahn ◽

Hong-Gu Ji ◽

Woo-Jin Chang ◽

Jae-Kyoung Mun ◽

...

Keyword(s):

Comparative Study ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

Microwave Characteristics

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Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.4964689 ◽

2016 ◽

Vol 120 (15) ◽

pp. 155104 ◽

Author(s):

Kevin R. Bagnall ◽

Cyrus E. Dreyer ◽

David Vanderbilt ◽

Evelyn N. Wang

Keyword(s):

Electric Field ◽

Field Dependence ◽

Optical Phonon ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Dependence

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Erratum: “The role of electric field-induced strain in the degradation mechanism of AlGaN/GaN high-electron-mobility transistors” [Appl. Phys. Lett. 94, 053501 (2009)]

Applied Physics Letters ◽

10.1063/1.3182628 ◽

2009 ◽

Vol 95 (2) ◽

pp. 029902

Author(s):

C. Rivera ◽

E. Muñoz

Keyword(s):

Electric Field ◽

Electron Mobility ◽

Degradation Mechanism ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Electric Field Induced Strain

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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/22/11/117306 ◽

2013 ◽

Vol 22 (11) ◽

pp. 117306 ◽

Author(s):

Ren-Bing Tan ◽

Hua Qin ◽

Xiao-Yu Zhang ◽

Wen Xu

Keyword(s):

Electric Field ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Plasmon Dispersion

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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591133 ◽

1999 ◽

Vol 17 (6) ◽

pp. 2596 ◽

Author(s):

T. Hussain ◽

P. Chu ◽

C. P. Wen ◽

M. Circle ◽

A. Gomez ◽

...

Keyword(s):

Millimeter Wave ◽

Integrated Circuit ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Recessed Gate ◽

Millimeter Wave Integrated Circuit

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