Comparing rapid thermal process and low-temperature furnace annealed poly test wafers by SIMS and FTIR

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

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Non-Prefabricated Nanocrystal Mesoporous TiO2-Based Photoanodes Tuned by A Layer-by-Layer and Rapid Thermal Process

ACS Applied Materials & Interfaces ◽

10.1021/am9006726 ◽

2009 ◽

Vol 2 (1) ◽

pp. 265-269 ◽

Cited By ~ 11

Author(s):

Junchao Tao ◽

Yan Sun ◽

Meiying Ge ◽

Xin Chen ◽

Ning Dai

Keyword(s):

Thermal Process ◽

Mesoporous Tio2 ◽

Layer By Layer ◽

Rapid Thermal Process

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Intermediate band materials obtained by rapid thermal process of Co-implanted silicon

Materials Letters ◽

10.1016/j.matlet.2017.08.095 ◽

2017 ◽

Vol 209 ◽

pp. 522-524 ◽

Cited By ~ 1

Author(s):

Jiren Yuan ◽

Haibin Huang ◽

Xinhua Deng ◽

Mingang Gong ◽

Cuicui Liu ◽

...

Keyword(s):

Thermal Process ◽

Rapid Thermal Process ◽

Intermediate Band

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Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3462031 ◽

2010 ◽

Vol 28 (5) ◽

pp. 1115-1121 ◽

Cited By ~ 3

Author(s):

Z. P. Shan ◽

S. L. Gu ◽

K. P. Wu ◽

S. M. Zhu ◽

K. Tang ◽

...

Keyword(s):

Thermal Process ◽

Visible Emission ◽

Zno Films ◽

Rapid Thermal Process ◽

Doped Zno ◽

Induced Changes

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Effects of the Conditions of a Rapid Thermal Process for CIGS Films on the Characteristics of CIGS Solar Cells

New Physics Sae Mulli ◽

10.3938/npsm.62.289 ◽

2012 ◽

Vol 62 (3) ◽

pp. 289

Author(s):

Chan Kim ◽

Il su Rhee ◽

Dae Hwan Kim

Keyword(s):

Solar Cells ◽

Thermal Process ◽

Rapid Thermal Process ◽

Cigs Solar Cells

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Growth Monitoring of Cu-Poor Prepared CuInS2 Thin Films

MRS Proceedings ◽

10.1557/proc-668-h1.4 ◽

2001 ◽

Vol 668 ◽

Cited By ~ 5

Author(s):

Ilka V. Luck ◽

Jacobo Alvarez-Garcia ◽

Lorenzo Calvo-Barrio ◽

Axel Werner ◽

Alejandro Perez-Rodriguez ◽

...

Keyword(s):

Raman Spectroscopy ◽

Thermal Process ◽

Elemental Sulfur ◽

Film Formation ◽

Sample Surface ◽

Growth Monitoring ◽

Rapid Thermal Process ◽

Intermediate Phases ◽

Cuins2 Thin Films ◽

Thin Film Formation

ABSTRACTThe CuInS2 thin film formation from a Cu/In precursor stack in the presence of elemental sulfur using a rapid thermal process under Cu-poor conditions has been studied. The process has been aborted at appropriate stages and the corresponding samples were investigated by XRD, Raman spectroscopy and SEM. The sulfurisation starts from elemental Cu and CuIn2. Elemental In and the binary phases Cu11In9 and Cu7In3 appear as intermediate phases. At the end of the sulfurisation the sample contains the ternary phases CuInS2 and CuIn5S8. CuS and β-In2S3 are detected by Raman spectroscopy at the sample surface and at distinct stages of the sulfurisation only. A difference in CuInS2 crystal quality is observed between the surface and the bottom of the samples.

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