Determination of Subcritical Crack Growth Parameters by In Situ Observation of Indentation Cracks

1995 ◽  
Vol 78 (8) ◽  
pp. 2122-2128 ◽  
Author(s):  
Priya J. Dwivedi ◽  
David J. Green
1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.


Author(s):  
Christopher Brokmann ◽  
Stefan Kolling ◽  
Jens Schneider

Abstract In the present work, subcritical crack growth in soda–lime silicate glass is investigated under different environmental conditions. Crack growth parameters as a function of temperature and humidity were determined by dynamic fatigue tests, which has been verified by using the in-situ method of filming crack growth during experiments. The specimens were pre-damaged for constant initial crack lengths in all specimens using the Vickers indentation test. The determined parameters were compared with those from literature in order to discuss existing deviations of sub-critical crack growth parameters in literature. These deviations may be caused by environmental conditions and different chemical compositions of the glass. Arrest lines were used to determine the ratio of crack width to crack depth in Vickers indented specimens. For the initial crack depth, images of fracture surfaces were taken using an scanning electron microscope. Furthermore, the influence of humidity and temperature on the failure stress of unindented specimens with a constant initial crack length was simulated.


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