Values of K-shell partial cross-section for electron energy-loss spectrometry

1981 ◽  
Vol 123 (3) ◽  
pp. 333-337 ◽  
Author(s):  
R. F. Egerton
Author(s):  
Dale E. Newbury ◽  
Richard D. Leapman

The measurement of trace level constituents, arbitrarily defined for this study as concentration levels below 1 atom percent, has always been considered problematic for analytical electron microscopy (AEM) with energy dispersive x-ray spectrometry (EDS) and electron energy loss spectrometry (EELS). In a landmark study of various microanalysis techniques, Wittry evaluated the influence of various instrumental factors (source brightness, detection efficiency, accumulation time) and physical factors (cross section, peak-to-background) upon detection limits. Although the ionization cross section, fluorescence yield, and collection efficiency favor EELS over EDS, the peak-to-background ratio of EELS spectra is much lower than that of EDS spectra, leading Wittry to suggest that the limit of detection should be 0.1 percent for EDS and 1 percent for EELS for practical measurement conditions. Recent developments in parallel detection EELS (PEELS) indicate that a re-evaluation of the situation for trace constituent determination is needed for those elements characterized by "white line" resonance structures at the ionization edge.


The composition of the Al 3 Li (δ)' metastable precipitation-hardening phase is an important factor in understanding the strengthening behaviour of Al-Li base alloys. The procedure for using electron energy-loss spectrometry in a transmission electron microscope for accurate quantification of the Li content of δ' is established. All factors that can affect the accuracy of the analysis procedure are considered, namely: the specimen preparation, the mode of operation of the microscope, the identification of spectra from through-thickness regions of the specimen, the calibration of the Li / Al partial cross-section ratio, the deconvolution of the spectra and the background extrapolation scheme. The composition of the δ' phase in the temperature range 155-290 °C is determined, and the non-stoichiometry of this phase is clearly shown.


Author(s):  
M. Isaacson

In an earlier paper1 it was found that to a good approximation, the efficiency of collection of electrons that had lost energy due to an inner shell excitation could be written as where σE was the total excitation cross-section and σE(θ, Δ) was the integral cross-section for scattering within an angle θ and with an energy loss up to an energy Δ from the excitation edge, EE. We then obtained: where , with P being the momentum of the incident electron of velocity v. The parameter r was due to the assumption that d2σ/dEdΩ∞E−r for energy loss E. In reference 1 it was assumed that r was a constant.


1992 ◽  
Vol 259 ◽  
Author(s):  
Selmer S. Wong ◽  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Aimee L. Smith ◽  
Harry A. Atwater

ABSTRACTWe have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.


Author(s):  
M Stöger-Pollach ◽  
C Hébert ◽  
E C Karl-Rückert ◽  
P Schattschneider ◽  
B Rau ◽  
...  

1990 ◽  
Vol 359 ◽  
pp. 246 ◽  
Author(s):  
Thomas J. Bernatowicz ◽  
Patrick C. Gibbons ◽  
Roy S. Lewis

2000 ◽  
Vol 77 (2) ◽  
pp. 238-240 ◽  
Author(s):  
A. Hightower ◽  
C. C. Ahn ◽  
B. Fultz ◽  
P. Rez

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