Numerical Study of Turbulent Confined Jets Impinging on a Heated Substrate for Thin Film Deposition

2014 ◽  
Vol 136 (10) ◽  
Author(s):  
Harry Nizard ◽  
Adrien Toutant ◽  
Françoise Massines

This paper reports on the study of confined jets and jets interaction in terms of increasing chemical transport. The context of this study is the atmospheric pressure plasma-enhanced chemical vapor deposition, higher thin film growth rate being desired, while maintaining total flow rate as low as possible. Turbulence mixing and enhanced heat transfer are the physical mechanisms identified as being capable of increasing the growth rate at atmospheric pressure. A numerical study of jets impinging on a heated substrate was carried out using quasicompressible Reynolds-Averaged Navier–Stokes (RANS) equations. Abe–Kondoh–Nagano (AKN) low-Reynolds k-ε and standard k-ε models were tested using an unconfined impinging jet at Reynolds number Re = 23,750 for jet diameter to plate-spacing ratios of H/d = 2 and H/d = 6. Results were compared with experimental data from the literature. Based on numerical results and in accordance with existing findings, the AKN low-Reynolds k-ε was shown to be reasonably accurate and was thus chosen for the numerical study. The effects of flow rate, hole diameter and length, jet-to-jet spacing, confinement width, and jet number were investigated numerically for inline jets confined between two vertical planes for jet Reynolds numbers between 810 and 5060. The configurations with the greatest turbulent intensity were studied, with the addition of diluted species transport and consumption. A laminar flow setup with a slot jet (Re = 79.5) was compared to two injection designs consisting of a simple set of 12 impinging gas jets (Rej = 2530; H/d = 3) with and without the adjunction of a wire to break the jets (Rej = 1687; H/d = 2). The two turbulent injection methods improved growth rate by 15%, which mainly resulted from a larger gas heating by the surface due to turbulent heat exchange in the jet impact zone.

2012 ◽  
Vol 9 (11-12) ◽  
pp. 1041-1073 ◽  
Author(s):  
Francoise Massines ◽  
Christian Sarra-Bournet ◽  
Fiorenza Fanelli ◽  
Nicolas Naudé ◽  
Nicolas Gherardi

2011 ◽  
Vol 63 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Mohammad Asaduzzaman Chowdhury ◽  
Dewan Muhammad Nuruzzaman ◽  
Khaled Khalil ◽  
Mohammad Lutfar Rahaman

2007 ◽  
Vol 129 (10) ◽  
pp. 1432-1444 ◽  
Author(s):  
Xiaojin Wei ◽  
Yogendra Joshi ◽  
Michael K. Patterson

One of the promising liquid cooling techniques for microelectronics is attaching a microchannel heat sink to, or directly fabricating microchannels on, the inactive side of the chip. A stacked microchannel heat sink integrates many layers of microchannels and manifold layers into one stack. Compared with single-layered microchannels, stacked microchannels provide larger flow passages, so that for a fixed heat load the required pressure drop is significantly reduced. Better temperature uniformity can be achieved by arranging counterflow in adjacent microchannel layers. The dedicated manifolds help to distribute coolant uniformly to microchannels. In the present work, a stacked microchannel heat sink is fabricated using silicon micromachining techniques. Thermal performance of the stacked microchannel heat sink is characterized through experimental measurements and numerical simulations. Effects of coolant flow direction, flow rate allocation among layers, and nonuniform heating are studied. Wall temperature profiles are measured using an array of nine platinum thin-film resistive temperature detectors deposited simultaneously with thin-film platinum heaters on the backside of the stacked structure. Excellent overall cooling performance (0.09°C∕Wcm2) for the stacked microchannel heat sink has been shown in the experiments. It has also been identified that over the tested flow rate range, counterflow arrangement provides better temperature uniformity, while parallel flow has the best performance in reducing the peak temperature. Conjugate heat transfer effects for stacked microchannels for different flow conditions are investigated through numerical simulations. Based on the results, some general design guidelines for stacked microchannel heat sinks are provided.


Author(s):  
James E. Maslar ◽  
William A. Kimes ◽  
Brent A. Sperling

Thin film vapor deposition processes, e.g., chemical vapor deposition, are widely used in high-volume manufacturing of electronic and optoelectronic devices. Ensuring desired film properties and maximizing process yields require control of the chemical precursor flux to the deposition surface. However, achieving the desired control can be difficult due to numerous factors, including delivery system design, ampoule configuration, and precursor properties. This report describes an apparatus designed to investigate such factors. The apparatus simulates a single precursor delivery line, e.g., in a chemical vapor deposition tool, with flow control, pressure monitoring, and a precursor-containing ampoule. It also incorporates an optical flow cell downstream of the ampoule to permit optical measurements of precursor density in the gas stream. From such measurements, the precursor flow rate can be determined, and, for selected conditions, the precursor partial pressure in the headspace can be estimated. These capabilities permit this apparatus to be used for investigating a variety of factors that affect delivery processes. The methods of determining the pressure to (1) calculate the precursor flow rate and (2) estimate the headspace pressure are discussed, as are some of the errors associated with these methods. While this apparatus can be used under a variety of conditions and configurations relevant to deposition processes, the emphasis here is on low-volatility precursors that are delivered at total pressures less than about 13 kPa downstream of the ampoule. An important goal of this work is to provide data that could facilitate both deposition process optimization and ampoule design refinement.


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